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Titolo Data di pubblicazione Autore(i) File
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 1-gen-2012 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
Performance of III-V nanoscale MOSFETs: a simulation study 1-gen-2013 Lizzit, Daniel; Osgnach, P; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 1-gen-2013 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs 1-gen-2013 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 1-gen-2013 Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
The impact of interface states on the mobility and the drive current of III-V MOSFETs 1-gen-2014 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 1-gen-2015 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 1-gen-2015 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs 1-gen-2015 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 1-gen-2016 Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 1-gen-2016 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 8-apr-2016 Lizzit, Daniel
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section 1-gen-2017 Badami, Oves Mohamed Hussein; Lizzit, D.; Specogna, Ruben; Esseni, David
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme 1-gen-2017 Lizzit, D.; Badami, O.; Specogna, Ruben; Esseni, David
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 1-gen-2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Mostrati risultati da 1 a 20 di 59
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