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Mostrati risultati da 1 a 20 di 119
Titolo Data di pubblicazione Autore(i) File
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Substrate Enhanced Gate Currents in CMOS Devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Hot carrier degradation and damage profiling of cmos devices with biased substrates 1-gen-2000 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
Substrate enhanced degradation of cmos devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Hot Hole Gate Current in Surface Channel p-MOSFETs 1-gen-2001 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments 1-gen-2002 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 1-gen-2002 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 1-gen-2003 Driussi, Francesco; Duuren, M. J.; VAN SCHAIJK, R.
On the electrical monitor for device degradation in the CHISEL stress regime 1-gen-2003 Driussi, Francesco; Esseni, David; Selmi, Luca
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 1-gen-2003 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides 1-gen-2004 Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; Widdershoven, F.
Performance, degradation monitors, and reliability of the CHISEL injection regime 1-gen-2004 Driussi, Francesco; Esseni, David; Selmi, Luca
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 1-gen-2004 Driussi, Francesco; Iob, Romano; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 1-gen-2005 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 1-gen-2005 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; M., VAN DUUREN
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 1-gen-2005 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; AND M., VAN DUUREN
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 1-gen-2005 Driussi, Francesco; Marcuzzi, S; Palestri, Pierpaolo; Selmi, Luca
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 1-gen-2005 DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 1-gen-2006 Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F.
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 1-gen-2006 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Mostrati risultati da 1 a 20 di 119
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