Sfoglia per Autore
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Hot carrier degradation and damage profiling of cmos devices with biased substrates
2000-01-01 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
Substrate enhanced degradation of cmos devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Substrate Enhanced Gate Currents in CMOS Devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Hot Hole Gate Current in Surface Channel p-MOSFETs
2001-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments
2002-01-01 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime
2002-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds
2003-01-01 Driussi, Francesco; Duuren, M. J.; VAN SCHAIJK, R.
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap
2003-01-01 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
On the electrical monitor for device degradation in the CHISEL stress regime
2003-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs
2004-01-01 Driussi, Francesco; Iob, Romano; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides
2004-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; Widdershoven, F.
Performance, degradation monitors, and reliability of the CHISEL injection regime
2004-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model
2005-01-01 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; M., VAN DUUREN
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
2005-01-01 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs
2005-01-01 DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays
2005-01-01 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; AND M., VAN DUUREN
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells
2005-01-01 Driussi, Francesco; Marcuzzi, S; Palestri, Pierpaolo; Selmi, Luca
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ?
2006-01-01 Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F.
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells
2006-01-01 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
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