Sfoglia per Autore  

Opzioni
Mostrati risultati da 1 a 20 di 351
Titolo Data di pubblicazione Autore(i) File
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 1-gen-1994 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Soft Programming in Scaled Flash EEPROM Cells 1-gen-1995 Esseni, David; Selmi, Luca; Bez, R; L. RAVAZZI, L; Sangiorgi, E.
Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime 1-gen-1995 Esseni, David; Selmi, Luca; Sangiorgi, E; Bez, R; Ricco, B.
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 1-gen-1995 B., Ricco'; Esseni, David
"Characterization of Polysilicon-Gate Depletion in MOS Structures" 1-gen-1996 B., Riccò; R., Versari; Esseni, David
The Impact of Device Design on the Substrate Enhanced Gate Current of VLSI MOSFET's 1-gen-1998 Esseni, David; Selmi, Luca; Bez, R.
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime" 1-gen-1998 Esseni, David; H., Iway; M. SAITO AND B., Ricco
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" 1-gen-1998 Esseni, David; A., Pieracci; M. QUADRELLI AND B., Ricco
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices 1-gen-1998 Esseni, David; Selmi, Luca
A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells 1-gen-1998 Esseni, David; B., Ricco
Trade-Off Between Programming Speed and Current Absorption in Flash EEPROM Memories 1-gen-1999 Esseni, David; Giannasi, F.; Ricco, B.; Villa, D.
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 1-gen-1999 Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco
The scaling properties of CHISEL and CHE injection efficiency in MOSFETs and FLASH memory cells 1-gen-1999 Esseni, David; Selmi, Luca; Ghetti, A; Sangiorgi, E.
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects" 1-gen-1999 Esseni, David; Selmi, Luca
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 1-gen-1999 Selmi, Luca; Esseni, David
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Substrate Enhanced Gate Currents in CMOS Devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Hot carrier degradation and damage profiling of cmos devices with biased substrates 1-gen-2000 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
European Patent application no.00830546.8, filing date july 31 2000 1-gen-2000 Esseni, David; Selmi, Luca; Bez, R.; Modelli, A.
Substrate enhanced degradation of cmos devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Mostrati risultati da 1 a 20 di 351
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile