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Titolo Data di pubblicazione Autore(i) File
Optimization Guidelines for Epitaxial Collectors of Advanced BJT’s with Improved Breakdown Voltage and Speed 1-gen-1998 Palestri, Pierpaolo; Fiegna, C; Selmi, Luca; Hurkx, F; Slotboom, J; Sangiorgi, Enrico
Energy Dependent Electron and Hole Impact Ionization in Si Bipolar Transistors 1-gen-1998 Palestri, Pierpaolo; Selmi, Luca; Hurkx, F; Slotboom, J; Sangiorgi, Enrico
Analysis of highly non-uniform collector doping profiles for the optimization of the breakdown / speed trade off in advanced BJTs 1-gen-1999 Palestri, Pierpaolo; Fiegna, C; Selmi, Luca; Peter, M. S.; Hurkx, G. A. M.; Slotboom, J. W.; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors 1-gen-2000 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Non Local Electron and Hole Impact Ionization in Advanced Si BJTs 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; Hurkx, G. A. M.; Slotboom, J. W.; Terpstra, D; Peter, M; Woltjer, R; Sangiorgi, Enrico
Monte Carlo Analysis of Signal Delays in BJTs 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Hot Carrier Effects in MOS capacitors: Improvements in Coupled Monte Carlo Simulations of Si and SiO2 Transport 1-gen-2000 P., Rigolli; M., Manfredi; M., Pavesi; Palestri, Pierpaolo; Selmi, Luca
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 1-gen-2000 Palestri, Pierpaolo; Fiegna, C.; Selmi, Luca; Peter, M. S.; Hurkx, G. A. M.; Slotboom, J. W.; Sangiorgi, Enrico
Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, Enrico; M., Pavesi; F., Widdershoven
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 1-gen-2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
On the Extraction of Oxide Thickness and Sub-Band Energy Shift in Thin Oxide MOS Capacitors with Permeable Gates 1-gen-2001 DALLA SERRA, Alberto; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
Thermal Resistance in Si(1-x) Ge(x) HBTs on Bulk and SOI Substrates 1-gen-2001 Palestri, Pierpaolo; A., Pacelli; M., Mastrapasqua
Device simulation for advenced Si(1-x) Ge(x) HBTs 1-gen-2001 M., Mastrapasqua; A., Pacelli; Palestri, Pierpaolo; C. A., King
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 1-gen-2001 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
Microscopic Analysis of the Impact of Substrate Bias on the Gate Current of pMOSFETs 1-gen-2001 Zanchetta, Sergio; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Non-local microscopic view of signal propagation times in BJTs biased up to high currents 1-gen-2001 Palestri, Pierpaolo; Selmi, Luca
Monte Carlo Simulation of Impact Ionization in SiGe HBTs 1-gen-2001 Palestri, Pierpaolo; Pacelli, A.; Mastrapasqua, M.; Bude, J. D.
Mostrati risultati da 1 a 20 di 340
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