Sfoglia per Autore
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
2012-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices
2013-01-01 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel
2013-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
Performance of III-V nanoscale MOSFETs: a simulation study
2013-01-01 Lizzit, Daniel; Osgnach, P; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs
2013-01-01 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs
2013-01-01 Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
2014-01-01 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs
2014-01-01 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
The impact of interface states on the mobility and the drive current of III-V MOSFETs
2014-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs
2015-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps
2015-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain
2015-01-01 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs
2015-01-01 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors
2015-01-01 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
2016-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs
2016-01-01 Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs
2016-04-08 Lizzit, Daniel
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme
2017-01-01 Lizzit, D.; Badami, O.; Specogna, Ruben; Esseni, David
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes
2017-01-01 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section
2017-01-01 Badami, Oves Mohamed Hussein; Lizzit, D.; Specogna, Ruben; Esseni, David
Spin Structure of K Valleys in Single-Layer WS2 on Au(111)
2018-01-01 Eickholt, P.; Sanders, C.; Dendzik, M.; Bignardi, L.; Lizzit, D.; Lizzit, S.; Bruix, A.; Hofmann, P.; Donath, M.
Epitaxial growth of single-orientation high-quality MoS2 monolayers
2018-01-01 Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Novel single-layer vanadium sulphide phases
2018-01-01 Arnold, F.; Stan, R. -M.; Mahatha, S. K.; Lund, H. E.; Curcio, D.; Dendzik, M.; Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Lizzit, D.; Li, Z.; Bianchi, M.; Miwa, J. A.; Bremholm, M.; Lizzit, S.; Hofmann, P.; Sanders, C. E.
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating
2018-01-01 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits
2018-01-01 Esseni, D.; Badami, Oves Mohamed Hussein; Driussi, F.; Lizzit, D.; Pala, M.; Palestri, P.; Rollo, T.; Selmi, L.; Venica, S.
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001)
2018-01-01 Ulstrup, S.; Lacovig, P.; Orlando, F.; Lizzit, D.; Bignardi, L.; Dalmiglio, M.; Bianchi, M.; Mazzola, F.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)
2019-01-01 Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.
Dual-Route Hydrogenation of the Graphene/Ni Interface
2019-01-01 Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R.
Electron–phonon coupling in single-layer MoS2
2019-01-01 Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P.
Momentum-resolved linear dichroism in bilayer MoS2
2019-01-01 Volckaert, K.; Rostami, H.; Biswas, D.; Markovic, I.; Andreatta, F.; Sanders, C. E.; Majchrzak, P.; Cacho, C.; Chapman, R. T.; Wyatt, A.; Springate, E.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Mahatha, S. K.; Bianchi, M.; Lanata, N.; King, P. D. C.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So.
Layer and orbital interference effects in photoemission from transition metal dichalcogenides
2019-01-01 Rostami, H.; Volckaert, K.; Lanata, N.; Mahatha, S. K.; Sanders, C. E.; Bianchi, M.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So.
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111)
2019-01-01 Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M.
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum
2020-01-01 Apostol, N. G.; Lizzit, D.; Lungu, G. A.; Lacovig, P.; Chirila, C. F.; Pintilie, L.; Lizzit, S.; Teodorescu, C. M.
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification
2020-01-01 De Angelis, D.; Presel, F.; Jabeen, N.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Lizzit, S.; Montini, T.; Fornasiero, P.; Alfe, D.; Baraldi, A.
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles
2020-01-01 Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M.
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene
2020-01-01 Avvisati, G.; Gargiani, P.; Lizzit, D.; Valvidares, M.; Lacovig, P.; Petrillo, C.; Sacchetti, F.; Betti, M. G.
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study
2020-01-01 Loi, F.; Sbuelz, L.; Lacovig, P.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Baraldi, A.
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing
2020-01-01 Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M.
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach
2021-01-01 Caruso, Enrico; Esseni, David; Gnani, Elena; Lizzit, Daniel; Palestri, Pierpaolo; Pin, Alessandro; Puglisi, Francesco Maria; Selmi, Luca; Zagni, Nicolò
Mixed Cation Halide Perovskite under Environmental and Physical Stress
2021-01-01 Larciprete, Rosanna; Agresti, Antonio; Pescetelli, Sara; Pazniak, Hanna; Liedl, Andrea; Lacovig, Paolo; Lizzit, Daniel; Tosi, Ezequiel; Lizzit, Silvano; Di Carlo, Aldo
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes
2021-01-01 Pazniak, H.; Benchakar, M.; Bilyk, T.; Liedl, A.; Busby, Y.; Noel, C.; Chartier, P.; Hurand, S.; Marteau, M.; Houssiau, L.; Larciprete, R.; Lacovig, P.; Lizzit, D.; Tosi, E.; Lizzit, S.; Pacaud, J.; Celerier, S.; Mauchamp, V.; David, M. -L.
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation
2021-01-01 Lizzit, D.; Esseni, D.
Ultrafast electronic linewidth broadening in the C 1s core level of graphene
2021-01-01 Curcio, D; Pakdel, S; Volckaert, K; Miwa, Ja; Ulstrup, S; Lanata, N; Bianchi, M; Kutnyakhov, D; Pressacco, F; Brenner, G; Dziarzhytski, S; Redlin, H; Agustsson, Sy; Medjanik, K; Vasilyev, D; Elmers, Hj; Schonhense, G; Tusche, C; Chen, Yj; Speck, F; Seyller, T; Buhlmann, K; Gort, R; Diekmann, F; Rossnagel, K; Acremann, Y; Demsar, J; Wurth, W; Lizzit, D; Bignardi, L; Lacovig, P; Lizzit, S; Sanders, Ce; Hofmann, P
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors
2021-01-01 Majchrzak, P.; Volckaert, K.; Cabo, A. G.; Biswas, D.; Bianchi, M.; Mahatha, S. K.; Dendzik, M.; Andreatta, F.; Gronborg, S. S.; Markovic, I.; Riley, J. M.; Johannsen, J. C.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Cacho, C.; Alexander, O.; Matselyukh, D.; Wyatt, A. S.; Chapman, R. T.; Springate, E.; Lauritsen, J. V.; King, P. D. C.; Sanders, C. E.; Miwa, J. A.; Hofmann, P.; Ulstrup, S.
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110)
2021-01-01 Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
2021-01-01 Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M.
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions
2022-01-01 Segatto, M.; Massarotto, M.; Lancaster, S.; Duong, Q. T.; Affanni, A.; Fontanini, R.; Driussi, F.; Lizzit, D.; Mikolajick, T.; Slesazeck, S.; Esseni, D.
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects
2022-01-01 Lizzit, D.; Bernardi, T.; Esseni, D.
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon
2022-01-01 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
2022-01-01 Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs | 1-gen-2012 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca | |
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices | 1-gen-2013 | Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca | |
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel | 1-gen-2013 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca | |
Performance of III-V nanoscale MOSFETs: a simulation study | 1-gen-2013 | Lizzit, Daniel; Osgnach, P; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Surface roughness limited mobility modeling in ultra-thin SOI and quantum well III-V MOSFETs | 1-gen-2013 | Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs | 1-gen-2013 | Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors | 1-gen-2014 | Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs | 1-gen-2014 | Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca | |
The impact of interface states on the mobility and the drive current of III-V MOSFETs | 1-gen-2014 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Improved surface roughness modeling and mobility projections in thin film MOSFETs | 1-gen-2015 | Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps | 1-gen-2015 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain | 1-gen-2015 | Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs | 1-gen-2015 | Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors | 1-gen-2015 | Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca | |
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs | 1-gen-2016 | Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs | 1-gen-2016 | Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca | |
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs | 8-apr-2016 | Lizzit, Daniel | |
Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme | 1-gen-2017 | Lizzit, D.; Badami, O.; Specogna, Ruben; Esseni, David | |
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes | 1-gen-2017 | Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M. | |
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section | 1-gen-2017 | Badami, Oves Mohamed Hussein; Lizzit, D.; Specogna, Ruben; Esseni, David | |
Spin Structure of K Valleys in Single-Layer WS2 on Au(111) | 1-gen-2018 | Eickholt, P.; Sanders, C.; Dendzik, M.; Bignardi, L.; Lizzit, D.; Lizzit, S.; Bruix, A.; Hofmann, P.; Donath, M. | |
Epitaxial growth of single-orientation high-quality MoS2 monolayers | 1-gen-2018 | Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S. | |
Novel single-layer vanadium sulphide phases | 1-gen-2018 | Arnold, F.; Stan, R. -M.; Mahatha, S. K.; Lund, H. E.; Curcio, D.; Dendzik, M.; Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Lizzit, D.; Li, Z.; Bianchi, M.; Miwa, J. A.; Bremholm, M.; Lizzit, S.; Hofmann, P.; Sanders, C. E. | |
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating | 1-gen-2018 | Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D. | |
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits | 1-gen-2018 | Esseni, D.; Badami, Oves Mohamed Hussein; Driussi, F.; Lizzit, D.; Pala, M.; Palestri, P.; Rollo, T.; Selmi, L.; Venica, S. | |
Photoemission investigation of oxygen intercalated epitaxial graphene on Ru(0001) | 1-gen-2018 | Ulstrup, S.; Lacovig, P.; Orlando, F.; Lizzit, D.; Bignardi, L.; Dalmiglio, M.; Bianchi, M.; Mazzola, F.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S. | |
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) | 1-gen-2019 | Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S. | |
Dual-Route Hydrogenation of the Graphene/Ni Interface | 1-gen-2019 | Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R. | |
Electron–phonon coupling in single-layer MoS2 | 1-gen-2019 | Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P. | |
Momentum-resolved linear dichroism in bilayer MoS2 | 1-gen-2019 | Volckaert, K.; Rostami, H.; Biswas, D.; Markovic, I.; Andreatta, F.; Sanders, C. E.; Majchrzak, P.; Cacho, C.; Chapman, R. T.; Wyatt, A.; Springate, E.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Mahatha, S. K.; Bianchi, M.; Lanata, N.; King, P. D. C.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So. | |
Layer and orbital interference effects in photoemission from transition metal dichalcogenides | 1-gen-2019 | Rostami, H.; Volckaert, K.; Lanata, N.; Mahatha, S. K.; Sanders, C. E.; Bianchi, M.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Miwa, J. A.; Balatsky, A. V.; Hofmann, P.; Ulstrup, So. | |
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) | 1-gen-2019 | Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M. | |
Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum | 1-gen-2020 | Apostol, N. G.; Lizzit, D.; Lungu, G. A.; Lacovig, P.; Chirila, C. F.; Pintilie, L.; Lizzit, S.; Teodorescu, C. M. | |
Interfacial two-dimensional oxide enhances photocatalytic activity of graphene/titania via electronic structure modification | 1-gen-2020 | De Angelis, D.; Presel, F.; Jabeen, N.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Lizzit, S.; Montini, T.; Fornasiero, P.; Alfe, D.; Baraldi, A. | |
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles | 1-gen-2020 | Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M. | |
Strong ferromagnetic coupling and tunable easy magnetization directions of FexCo1−x layer(s) intercalated under graphene | 1-gen-2020 | Avvisati, G.; Gargiani, P.; Lizzit, D.; Valvidares, M.; Lacovig, P.; Petrillo, C.; Sacchetti, F.; Betti, M. G. | |
Growth Mechanism and Thermal Stability of a MoS2-Graphene Interface: A High-Resolution Core-Level Photoelectron Spectroscopy Study | 1-gen-2020 | Loi, F.; Sbuelz, L.; Lacovig, P.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Baraldi, A. | |
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing | 1-gen-2020 | Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M. | |
Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach | 1-gen-2021 | Caruso, Enrico; Esseni, David; Gnani, Elena; Lizzit, Daniel; Palestri, Pierpaolo; Pin, Alessandro; Puglisi, Francesco Maria; Selmi, Luca; Zagni, Nicolò | |
Mixed Cation Halide Perovskite under Environmental and Physical Stress | 1-gen-2021 | Larciprete, Rosanna; Agresti, Antonio; Pescetelli, Sara; Pazniak, Hanna; Liedl, Andrea; Lacovig, Paolo; Lizzit, Daniel; Tosi, Ezequiel; Lizzit, Silvano; Di Carlo, Aldo | |
Ion Implantation as an Approach for Structural Modifications and Functionalization of Ti3C2TxMXenes | 1-gen-2021 | Pazniak, H.; Benchakar, M.; Bilyk, T.; Liedl, A.; Busby, Y.; Noel, C.; Chartier, P.; Hurand, S.; Marteau, M.; Houssiau, L.; Larciprete, R.; Lacovig, P.; Lizzit, D.; Tosi, E.; Lizzit, S.; Pacaud, J.; Celerier, S.; Mauchamp, V.; David, M. -L. | |
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation | 1-gen-2021 | Lizzit, D.; Esseni, D. | |
Ultrafast electronic linewidth broadening in the C 1s core level of graphene | 1-gen-2021 | Curcio, D; Pakdel, S; Volckaert, K; Miwa, Ja; Ulstrup, S; Lanata, N; Bianchi, M; Kutnyakhov, D; Pressacco, F; Brenner, G; Dziarzhytski, S; Redlin, H; Agustsson, Sy; Medjanik, K; Vasilyev, D; Elmers, Hj; Schonhense, G; Tusche, C; Chen, Yj; Speck, F; Seyller, T; Buhlmann, K; Gort, R; Diekmann, F; Rossnagel, K; Acremann, Y; Demsar, J; Wurth, W; Lizzit, D; Bignardi, L; Lacovig, P; Lizzit, S; Sanders, Ce; Hofmann, P | |
Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors | 1-gen-2021 | Majchrzak, P.; Volckaert, K.; Cabo, A. G.; Biswas, D.; Bianchi, M.; Mahatha, S. K.; Dendzik, M.; Andreatta, F.; Gronborg, S. S.; Markovic, I.; Riley, J. M.; Johannsen, J. C.; Lizzit, D.; Bignardi, L.; Lizzit, S.; Cacho, C.; Alexander, O.; Matselyukh, D.; Wyatt, A. S.; Chapman, R. T.; Springate, E.; Lauritsen, J. V.; King, P. D. C.; Sanders, C. E.; Miwa, J. A.; Hofmann, P.; Ulstrup, S. | |
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) | 1-gen-2021 | Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S. | |
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies | 1-gen-2021 | Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M. | |
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions | 1-gen-2022 | Segatto, M.; Massarotto, M.; Lancaster, S.; Duong, Q. T.; Affanni, A.; Fontanini, R.; Driussi, F.; Lizzit, D.; Mikolajick, T.; Slesazeck, S.; Esseni, D. | |
Multi-level Operation of FeFETs Memristors: The Crucial Role of Three Dimensional Effects | 1-gen-2022 | Lizzit, D.; Bernardi, T.; Esseni, D. | |
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon | 1-gen-2022 | Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P. | |
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures | 1-gen-2022 | Segatto, M.; Fontanini, R.; Driussi, F.; Lizzit, D.; Esseni, D. |
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