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Mostrati risultati da 1 a 50 di 119
Titolo Data di pubblicazione Autore(i) File
Observation of a new hole gate current component in p+-poly gate p-channel mosfet's 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Substrate Enhanced Gate Currents in CMOS Devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Hot carrier degradation and damage profiling of cmos devices with biased substrates 1-gen-2000 Driussi, Francesco; Esseni, David; Piazza, F.; Selmi, Luca
Substrate enhanced degradation of cmos devices 1-gen-2000 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza
Hot Hole Gate Current in Surface Channel p-MOSFETs 1-gen-2001 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Spectroscopic Analysis of Trap Assisted Tunneling on This Oxides by Means of Substrate Hot Electron Injection Experiments 1-gen-2002 Driussi, Francesco; Iob, R.; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 1-gen-2002 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Nitride Layer Influence on the Hydrogen Anneal of Interface Dangling Bonds 1-gen-2003 Driussi, Francesco; Duuren, M. J.; VAN SCHAIJK, R.
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 1-gen-2003 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
On the electrical monitor for device degradation in the CHISEL stress regime 1-gen-2003 Driussi, Francesco; Esseni, David; Selmi, Luca
Performance, degradation monitors, and reliability of the CHISEL injection regime 1-gen-2004 Driussi, Francesco; Esseni, David; Selmi, Luca
Investigation of the Energy Distribution of Stress-Induced Oxide Traps by Numerical Analysis of the TAT of HEs 1-gen-2004 Driussi, Francesco; Iob, Romano; Esseni, David; Selmi, Luca; VAN SCHAIJK, R.; Widdershoven, F.
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides 1-gen-2004 Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; Widdershoven, F.
Trade-off between Electron Velocity and Density of States in Ballistic nano-MOSFETs 1-gen-2005 DE MICHIELIS, Marco; Driussi, Francesco; Esseni, David
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part I: Description and Validation of the Model 1-gen-2005 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; M., VAN DUUREN
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices 1-gen-2005 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; M., VAN DUUREN; R., VAN SCHAIJK
Gate Current in Stacked Dielectrics for Advanced FLASH EEPROM cells 1-gen-2005 Driussi, Francesco; Marcuzzi, S; Palestri, Pierpaolo; Selmi, Luca
Experimental Characterization of Statistically Independent Defects in Gate Dielectrics - Part II: Experimental Results on Flash Memory Arrays 1-gen-2005 Driussi, Francesco; F., Widdershoven; Esseni, David; Selmi, Luca; AND M., VAN DUUREN
On the Passivation of Interface States in SONOS Test Structures: Impact of Device Layout and Annealing Process 1-gen-2006 Driussi, Francesco; Selmi, Luca; Akil, N.; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 1-gen-2006 Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F.
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 1-gen-2006 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs 1-gen-2007 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot
Fabrication, Characterization and Modeling of Strained SOI MOSFETs with Very Large Effective Mobility 1-gen-2007 Driussi, Francesco; Esseni, David; Selmi, Luca; M., Schmidt; M. C., Lemme; H., Kurz; D., Buca; S., Mantl; M., Luysberg; R., Loo; D., Nguyen; M., Reiche
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 1-gen-2007 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Explanation of SILC probability density distributions with nonuniform generation of traps in the tunnel oxide of flash memory arrays 1-gen-2007 Vianello, Elisa; Driussi, Francesco; Esseni, David; Selmi, Luca; Widdershoven, F; VAN DUUREN, M. J.
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 1-gen-2007 Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 1-gen-2007 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Impact of the Charge Transport in the Conduction Band on the Retention of Si-Nitride Based Memories 1-gen-2008 E., Vianello; Driussi, Francesco; Palestri, Pierpaolo; A., Arreghini; Esseni, David; Selmi, Luca; N., Akil; M., van Duuren; D. S., Golubović
Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier 1-gen-2008 D. S., Golubović; E., Vianello; A., Arreghini; Driussi, Francesco; M. J., van Duuren; N., Akil; Selmi, Luca; Esseni, David
Experimental characterization of the vertical position of the trapped charge in Si nitride-based nonvolatile memory cells 1-gen-2008 Arreghini, A; Driussi, F; Vianello, E; Esseni, D; VAN DUUREN, M. J.; Gobulovic, D. S.; Akil, N; VAN SCHAIJK, R
Long term charge retention dynamics of SONOS cells 1-gen-2008 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
On the electron mobility enhancement in biaxially strained Si MOSFETs 1-gen-2008 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellström; G., Malm; J., Hållstedt; M., Östling; T. J., Grasby; D. R., Leadley; X., Mescot
Impact of Device Layout and Annealing Process During the Passivation of Interface States in Presence of Silicon Nitride Layers 1-gen-2008 Driussi, Francesco; Selmi, Luca; N., Akil; M. J., van Duuren; R., van Schaijk
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 1-gen-2009 Vianello, Elisa; Perniola, L; Blaise, P; Molas, G; Colonna, J. P.; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Rochat, N; Licitra, C; Lafond, D; Kies, R; Reimbold, G; DE SALVO, B; Boulanger, F.
Program efficiency and high temperature retention of SiN/high-K based memories 1-gen-2009 Vianello, Elena; M., Bocquet; Driussi, Francesco; L., Perniola; G., Molas; Selmi, Luca
Simulation Study of Coulomb Mobility in Strained Silicon 1-gen-2009 Driussi, Francesco; Esseni, David
Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells 1-gen-2009 Vianello, Elisa; Driussi, Francesco; Arreghini, Antonio; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; N., Akil; M. J., van Duuren; D. S., Golubovic
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 1-gen-2009 Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness 1-gen-2009 Schmidt, M; Lemme, Mc; Gottlob, Hdb; Driussi, Francesco; Selmi, Luca; Kurz, H.
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness 1-gen-2009 Schmidt, M; Lemme, M. C.; Gottlob, H. D. B.; Kurz, H; Driussi, Francesco; Selmi, Luca
Revised analysis of Coulomb scattering limited mobility in biaxially strained silicon MOSFETs 1-gen-2009 Driussi, Francesco; Esseni, David
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 1-gen-2010 Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca
Experimental and simulation study of the program efficiency of HfO2 based charge trapping memories 1-gen-2010 Spiga, S.; Congedo, G.; Russo, U.; Lamperti, A.; Salicio, O.; Driussi, Francesco; Vianello, Elisa
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 1-gen-2010 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 1-gen-2010 Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 1-gen-2010 Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca
Explanation of the Charge-Trapping Properties of Silicon Nitride Storage Layers for NVM Devices Part I: Experimental Evidences From Physical and Electrical Characterizations 1-gen-2011 Vianello, Elisa; Driussi, Francesco; Perniola, L; Molas, G; Colonna, J. P.; DE SALVO, B; Selmi, Luca
Experimental procedure for accurate trap density study by low frequency charge pumping measurements 1-gen-2011 Datta, A; Driussi, Francesco; Esseni, David; Molas, G; Nowak, E.
Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs - Part II: Atomistic and Electrical Modeling 1-gen-2011 Vianello, Elisa; Driussi, Francesco; Blaise, P.; Palestri, Pierpaolo; Esseni, David; Perniola, L.; Molas, G.; De Salvo, B.; Selmi, Luca
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 1-gen-2011 Esseni, David; Driussi, Francesco
Mostrati risultati da 1 a 50 di 119
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