We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS2 and WTe2, by exploiting the non-equilibrium Green’s function method and including electron–phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length.

Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides

ESSENI, David;Pala, Marco
2016-01-01

Abstract

We simulate a band-to-band tunneling field-effect transistor based on a vertical heterojunction of single-layer MoS2 and WTe2, by exploiting the non-equilibrium Green’s function method and including electron–phonon scattering. For both in-plane and out-of-plane transport, we attempt to calibrate out models to the few available experimental results. We focus on the role of chemical doping and back-gate biasing, and investigate the off-state physics of this device by analyzing the influence of the top-gate geometrical alignment on the device performance. The device scalability as a function of gate length is also studied. Finally, we present two metrics for the switching delay and energy of the device. Our simulations indicate that vertical field-effect transistors based on transition metal dichalcogenides can provide very small values of sub-threshold swing when properly designed in terms of doping concentration and top-gate extension length.
File in questo prodotto:
File Dimensione Formato  
Cao_Quantum.pdf

non disponibili

Descrizione: Cao_Quantum
Tipologia: Documento in Post-print
Licenza: Non pubblico
Dimensione 3.5 MB
Formato Adobe PDF
3.5 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1076343
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 13
  • ???jsp.display-item.citation.isi??? 8
social impact