This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface roughness \Delta_rms. The model is formulated for fairly arbitrary cross-sections and biasing conditions.

Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section

BADAMI, Oves Mohamed Hussein;Lizzit, D.;SPECOGNA, Ruben;ESSENI, David
2017-01-01

Abstract

This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface roughness \Delta_rms. The model is formulated for fairly arbitrary cross-sections and biasing conditions.
2017
978-1-5090-3902-9
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1101286
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