We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.
Modeling electrostatic doping and series resistance in graphene-FETs
DRIUSSI, Francesco;PALESTRI, Pierpaolo;SELMI, Luca
2016-01-01
Abstract
We model the source/drain series resistance and the electrostatic doping effects associated to the source and drain metals in graphene FETs using a Monte Carlo transport simulator. We compare the new model to simulations assuming chemical doping in the source/drain regions. A procedure to include the series resistance as part of the self–consistent Monte Carlo loop is proposed and verified against the widely employed method based on look–up tables.File in questo prodotto:
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