Sfoglia per Autore
Quantum transport of electrons in open nanostructures with the Wigner-function formalism
1999-01-01 P., Bordone; M., Pascoli; R., Brunetti; A., Bertoni; C., Jacoboni; Abramo, Antonio
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy
1999-01-01 M. G., Betti; V., Corradini; V., De Renzi; C., Mariani; P., Casarini; Abramo, Antonio
Impact Ionization and Photon Emission in MOS Capacitors and FETs
2000-01-01 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs
2000-01-01 Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors
2000-01-01 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Short channel and hot carrier performance of ULSI MOSFETs with halo structures
2000-01-01 A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Well-tempered MOSFETs: 1D versus 2D quantum analysis
2000-01-01 Abramo, Antonio; Selmi, Luca; Yu, Z; Dutton, R.
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations
2000-01-01 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs
2000-01-01 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs
2001-01-01 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
Density of states of a two-dimensional electron gas at semiconductor surfaces
2001-01-01 Betti, Mg; Corradini, V.; Bertoni, G.; Casarini, P.; Mariani, C.; Abramo, Antonio
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs
2001-01-01 C., Fiegna; Abramo, Antonio
Physical origin of the excess thermal noise in short channel MOSFETs
2001-01-01 Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W.
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs
2002-01-01 Esseni, David; Abramo, Antonio
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs
2002-01-01 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs
2002-01-01 S., Zanchetta; A., Todon; Abramo, Antonio; Selmi, Luca; E., Sangiorgi
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors
2002-01-01 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs
2002-01-01 Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
Investigation on convergence and stability of self-consistent Monte Carlo device simulations
2002-01-01 Clerc, R; Palestri, Pierpaolo; Abramo, Antonio
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool
2003-01-01 Palestri, Pierpaolo; Esseni, David; Abramo, Antonio; Clerc, R; Selmi, Luca
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Quantum transport of electrons in open nanostructures with the Wigner-function formalism | 1-gen-1999 | P., Bordone; M., Pascoli; R., Brunetti; A., Bertoni; C., Jacoboni; Abramo, Antonio | |
Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy | 1-gen-1999 | M. G., Betti; V., Corradini; V., De Renzi; C., Mariani; P., Casarini; Abramo, Antonio | |
Impact Ionization and Photon Emission in MOS Capacitors and FETs | 1-gen-2000 | Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico | |
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs | 1-gen-2000 | Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico | |
Tunnelling Injection in Thin Oxide MOS Capacitors | 1-gen-2000 | . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E. | |
Short channel and hot carrier performance of ULSI MOSFETs with halo structures | 1-gen-2000 | A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico | |
Well-tempered MOSFETs: 1D versus 2D quantum analysis | 1-gen-2000 | Abramo, Antonio; Selmi, Luca; Yu, Z; Dutton, R. | |
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations | 1-gen-2000 | DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca | |
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs | 1-gen-2000 | Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico | |
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs | 1-gen-2001 | DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F. | |
Density of states of a two-dimensional electron gas at semiconductor surfaces | 1-gen-2001 | Betti, Mg; Corradini, V.; Bertoni, G.; Casarini, P.; Mariani, C.; Abramo, Antonio | |
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs | 1-gen-2001 | C., Fiegna; Abramo, Antonio | |
Physical origin of the excess thermal noise in short channel MOSFETs | 1-gen-2001 | Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W. | |
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs | 1-gen-2002 | Esseni, David; Abramo, Antonio | |
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs | 1-gen-2002 | Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico | |
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs | 1-gen-2002 | S., Zanchetta; A., Todon; Abramo, Antonio; Selmi, Luca; E., Sangiorgi | |
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors | 1-gen-2002 | Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico | |
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs | 1-gen-2002 | Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven | |
Investigation on convergence and stability of self-consistent Monte Carlo device simulations | 1-gen-2002 | Clerc, R; Palestri, Pierpaolo; Abramo, Antonio | |
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool | 1-gen-2003 | Palestri, Pierpaolo; Esseni, David; Abramo, Antonio; Clerc, R; Selmi, Luca |
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