IRIS

Sfoglia per Autore  

Opzioni
Mostrati risultati da 41 a 60 di 85
Titolo Data di pubblicazione Autore(i) File
Simulation study of the impact of channel doping profiles on MOSFET analog performance 1-gen-1999 C., Fiegna; Abramo, Antonio; E., Sangiorgi
Quantum transport of electrons in open nanostructures with the Wigner-function formalism 1-gen-1999 P., Bordone; M., Pascoli; R., Brunetti; A., Bertoni; C., Jacoboni; Abramo, Antonio
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 1-gen-2000 A., Todon; Selmi, Luca; Abramo, Antonio; Sangiorgi, Enrico
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 1-gen-2000 Abramo, Antonio; A., Cardin; Selmi, Luca; Sangiorgi, Enrico
Tunnelling Injection in Thin Oxide MOS Capacitors 1-gen-2000 . DALLA SERRA, A.; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, E.
Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 1-gen-2000 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Well-tempered MOSFETs: 1D versus 2D quantum analysis 1-gen-2000 Abramo, Antonio; Selmi, Luca; Yu, Z; Dutton, R.
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 1-gen-2000 Abramo, Antonio; Cardin, A.; Selmi, Luca; Sangiorgi, Enrico
Simulation of tunneling gate currents in ultra-thin SOI MOSFETs 1-gen-2001 C., Fiegna; Abramo, Antonio
Physical origin of the excess thermal noise in short channel MOSFETs 1-gen-2001 Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W.
Density of states of a two-dimensional electron gas at semiconductor surfaces 1-gen-2001 Betti, Mg; Corradini, V.; Bertoni, G.; Casarini, P.; Mariani, C.; Abramo, Antonio
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 1-gen-2001 DALLA SERRA, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 1-gen-2002 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 1-gen-2002 Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 1-gen-2002 Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 1-gen-2002 Clerc, R; Palestri, Pierpaolo; Abramo, Antonio
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 1-gen-2002 S., Zanchetta; A., Todon; Abramo, Antonio; Selmi, Luca; E., Sangiorgi
An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs 1-gen-2002 Esseni, David; Abramo, Antonio
Modeling electron transport in MOSFET devices: evolution and state of the art 1-gen-2003 Abramo, Antonio
Mostrati risultati da 41 a 60 di 85
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile