In this paper the semi-classical and quantum-mechanical definitions of escape-time from quasi-bound states have been compared in the frame of MOSFET gate leakage-current calculations. The theoretical background and the numerical issues involved in the implementation of these approaches inside device simulators have been compared. Results on many different thin gate-oxide capacitors, and on a special purpose test structure with mercury-probe contact, point out that the semi-classical approach is faster, less demanding from the numerical point of view, and surprisingly accurate compared to the fully quantum-mechanical treatment of more physically-sound models.

Tunnelling Injection in Thin Oxide MOS Capacitors

ABRAMO, Antonio;PALESTRI, Pierpaolo;SELMI, Luca;
2000

Abstract

In this paper the semi-classical and quantum-mechanical definitions of escape-time from quasi-bound states have been compared in the frame of MOSFET gate leakage-current calculations. The theoretical background and the numerical issues involved in the implementation of these approaches inside device simulators have been compared. Results on many different thin gate-oxide capacitors, and on a special purpose test structure with mercury-probe contact, point out that the semi-classical approach is faster, less demanding from the numerical point of view, and surprisingly accurate compared to the fully quantum-mechanical treatment of more physically-sound models.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/678043
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