DE MICHIELIS, Luca
 Distribuzione geografica
Continente #
NA - Nord America 486
AS - Asia 133
EU - Europa 104
SA - Sud America 14
AF - Africa 2
Totale 739
Nazione #
US - Stati Uniti d'America 482
SG - Singapore 63
CN - Cina 37
UA - Ucraina 32
DE - Germania 22
FI - Finlandia 15
HK - Hong Kong 12
BR - Brasile 11
TR - Turchia 10
IT - Italia 8
RU - Federazione Russa 7
IE - Irlanda 6
GB - Regno Unito 5
FR - Francia 4
VN - Vietnam 4
CA - Canada 3
AR - Argentina 2
ES - Italia 2
IN - India 2
AZ - Azerbaigian 1
BB - Barbados 1
BD - Bangladesh 1
BH - Bahrain 1
EC - Ecuador 1
ID - Indonesia 1
LK - Sri Lanka 1
NL - Olanda 1
PL - Polonia 1
SE - Svezia 1
TN - Tunisia 1
ZA - Sudafrica 1
Totale 739
Città #
Woodbridge 77
Fairfield 74
Ashburn 41
Wilmington 29
Chandler 28
Singapore 26
Seattle 25
Cambridge 24
Houston 24
Jacksonville 22
Beijing 20
Dearborn 14
Hong Kong 12
Izmir 10
Ann Arbor 9
Los Angeles 8
Munich 7
San Diego 7
Boardman 6
Dublin 6
Princeton 6
Dallas 4
Atlanta 3
Hangzhou 3
Hefei 3
Redondo Beach 3
Santa Clara 3
Bologna 2
Düsseldorf 2
Fortaleza 2
Helsinki 2
Jinan 2
Manchester 2
Montreal 2
Udine 2
Alpine 1
Amsterdam 1
Annapolis 1
Aylett 1
Baku 1
Belo Horizonte 1
Biên Hòa 1
Boston 1
Bridgetown 1
Buffalo 1
Cachoeiro de Itapemirim 1
Charlotte 1
Chicago 1
City of London 1
Colombo 1
Cruzeiro 1
Feira de Santana 1
Guayaquil 1
Hanoi 1
Harbin 1
Ho Chi Minh City 1
Ibotirama 1
Jaguariaíva 1
Jakarta 1
Johannesburg 1
Laferrere 1
Las Vegas 1
London 1
Manama 1
Monmouth Junction 1
New Delhi 1
New Port Richey 1
Nova Friburgo 1
Ogden 1
Orem 1
Phillipsburg 1
Queens 1
Quảng Ngãi 1
San Francisco 1
San Miguel de Tucumán 1
Shanghai 1
Shenyang 1
Simi Valley 1
Sorocaba 1
Stockholm 1
The Bronx 1
Toledo 1
Tunis 1
Turku 1
Warsaw 1
Xiamen 1
Totale 561
Nome #
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 137
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices 137
A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section 126
Tunneling path impact on semi-classical numerical simulations of TFET devices 123
Corner Effect and Local Volume Inversion in SiNW FETs 115
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 101
Totale 739
Categoria #
all - tutte 2.661
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.661


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202151 0 0 0 0 0 10 6 9 9 4 9 4
2021/202239 2 4 0 0 0 2 4 0 0 8 13 6
2022/202356 6 11 1 6 5 13 0 2 8 0 1 3
2023/202416 4 1 1 0 1 2 0 0 1 0 0 6
2024/2025107 3 9 6 0 6 3 4 1 17 9 19 30
2025/2026118 17 24 6 22 46 3 0 0 0 0 0 0
Totale 739