DE MICHIELIS, Luca
 Distribuzione geografica
Continente #
NA - Nord America 486
AS - Asia 139
EU - Europa 104
SA - Sud America 14
AF - Africa 2
Totale 745
Nazione #
US - Stati Uniti d'America 482
SG - Singapore 68
CN - Cina 37
UA - Ucraina 32
DE - Germania 22
FI - Finlandia 15
HK - Hong Kong 12
BR - Brasile 11
TR - Turchia 10
IT - Italia 8
RU - Federazione Russa 7
IE - Irlanda 6
GB - Regno Unito 5
VN - Vietnam 5
FR - Francia 4
CA - Canada 3
AR - Argentina 2
ES - Italia 2
IN - India 2
AZ - Azerbaigian 1
BB - Barbados 1
BD - Bangladesh 1
BH - Bahrain 1
EC - Ecuador 1
ID - Indonesia 1
LK - Sri Lanka 1
NL - Olanda 1
PL - Polonia 1
SE - Svezia 1
TN - Tunisia 1
ZA - Sudafrica 1
Totale 745
Città #
Woodbridge 77
Fairfield 74
Ashburn 41
Wilmington 29
Chandler 28
Singapore 26
Seattle 25
Cambridge 24
Houston 24
Jacksonville 22
Beijing 20
Dearborn 14
Hong Kong 12
Izmir 10
Ann Arbor 9
Los Angeles 8
Munich 7
San Diego 7
Boardman 6
Dublin 6
Princeton 6
Dallas 4
Atlanta 3
Hangzhou 3
Hefei 3
Redondo Beach 3
Santa Clara 3
Bologna 2
Düsseldorf 2
Fortaleza 2
Helsinki 2
Jinan 2
Manchester 2
Montreal 2
Udine 2
Alpine 1
Amsterdam 1
Annapolis 1
Aylett 1
Baku 1
Belo Horizonte 1
Biên Hòa 1
Boston 1
Bridgetown 1
Buffalo 1
Cachoeiro de Itapemirim 1
Charlotte 1
Chicago 1
City of London 1
Colombo 1
Cruzeiro 1
Feira de Santana 1
Guayaquil 1
Hanoi 1
Harbin 1
Ho Chi Minh City 1
Ibotirama 1
Jaguariaíva 1
Jakarta 1
Johannesburg 1
Laferrere 1
Las Vegas 1
London 1
Manama 1
Monmouth Junction 1
New Delhi 1
New Port Richey 1
Nova Friburgo 1
Ogden 1
Orem 1
Phillipsburg 1
Queens 1
Quảng Ngãi 1
San Francisco 1
San Miguel de Tucumán 1
Shanghai 1
Shenyang 1
Simi Valley 1
Sorocaba 1
Stockholm 1
The Bronx 1
Toledo 1
Tunis 1
Turku 1
Tân Bình 1
Warsaw 1
Xiamen 1
Totale 562
Nome #
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices 138
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices 138
A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section 127
Tunneling path impact on semi-classical numerical simulations of TFET devices 124
Corner Effect and Local Volume Inversion in SiNW FETs 116
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier 102
Totale 745
Categoria #
all - tutte 2.671
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.671


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202151 0 0 0 0 0 10 6 9 9 4 9 4
2021/202239 2 4 0 0 0 2 4 0 0 8 13 6
2022/202356 6 11 1 6 5 13 0 2 8 0 1 3
2023/202416 4 1 1 0 1 2 0 0 1 0 0 6
2024/2025107 3 9 6 0 6 3 4 1 17 9 19 30
2025/2026124 17 24 6 22 46 9 0 0 0 0 0 0
Totale 745