SANGIORGI, Enrico

SANGIORGI, Enrico  

Mostra records
Risultati 1 - 20 di 56 (tempo di esecuzione: 0.029 secondi).
Titolo Data di pubblicazione Autore(i) File
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 1-gen-1994 A., Ghetti; Selmi, Luca; Sangiorgi, Enrico; Abramo, Antonio; F., Venturi
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 1-gen-2002 Palestri, Pierpaolo; DALLA SERRA, Alberto; Selmi, Luca; M., Pavesi; Rigolli, P. L.; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
A Comparative Study of Hot-Carrier Induced Light Emission and Degradation in Bulk and SOI MOSFETs 1-gen-1995 Selmi, Luca; Pavesi, M; WONG H., S; Acovic, A; Sangiorgi, Enrico
A novel method to determine the Source and Drain resistances of individual MOSFETs 1-gen-1988 Ricco, B; Selmi, Luca; Sangiorgi, Enrico
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 1-gen-1993 Selmi, Luca; Fiegna, C; Bez, R; Sangiorgi, Enrico; Ricco, B.
A Test Chip and an Accurate Measurement System to Characterize Hot Hole Injection in the Gate Oxide of p-MOSFET’s 1-gen-1994 Selmi, Luca; Sangiorgi, Enrico; Bez, R; Ricco, B.
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 1-gen-2002 Palestri, Pierpaolo; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 1-gen-2001 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
An Improved Test Structure to Characterize Ultra- Low Hot Carrier Injection in Homogeneous Conditions 1-gen-1996 Selmi, Luca; Bez, R; Sangiorgi, Enrico
Analysis of highly non-uniform collector doping profiles for the optimization of the breakdown / speed trade off in advanced BJTs 1-gen-1999 Palestri, Pierpaolo; Fiegna, C; Selmi, Luca; PETER M., S; HURKX G. A., M; SLOTBOOM J., W; Sangiorgi, Enrico
Analysis of Uniform Degradation in n-MOSFETs 1-gen-1992 Selmi, Luca; Fiegna, C; Sangiorgi, Enrico; Bez, R; Ricco, B.
A better insight in the performance of silicon bjt's featuring highly non-uniform collector doping profiles 1-gen-2000 Palestri, Pierpaolo; Fiegna, C.; Selmi, Luca; Peter, M. S.; Hurkx, G. A. M.; Slotboom, J. W.; Sangiorgi, Enrico
Bias and Temperature Dependence of Homogeneous Hot-Electron Injection from Silicon into Silicon Dioxide at Low Voltages 1-gen-1997 Fischer, B; Ghetti, A; Selmi, Luca; Bez, R; Sangiorgi, Enrico
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 1-gen-1994 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Cathode Hot Electrons and Anode Hot Holes in Tunneling MOS Capacitors 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; Sangiorgi, Enrico; M., Pavesi; F., Widdershoven
Characterization and Modeling of Hot-Carrier Luminescence in Silicon n+/n/n+ Devices 1-gen-1995 Selmi, Luca; Mastrapasqua, M; BOULIN D., M; Bude, J; Manfredi, M; Sangiorgi, Enrico; Pinto, M. R.
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors 1-gen-2000 Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico
Device simulation for decananometer MOSFETs 1-gen-2003 Sangiorgi, Enrico; Palestri, Pierpaolo; Esseni, David; Fiegna, C.; Abramo, Antonio; Selmi, Luca
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 1-gen-1991 Menozzi, R; Selmi, Luca; Sangiorgi, Enrico; Ricco, B.
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs 1-gen-1990 Menozzi, R; Selmi, Luca; Sangiorgi, Enrico; Ricco, B.