ASANOVSKI, RUBEN
ASANOVSKI, RUBEN
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
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Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
2022-01-01 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs | 1-gen-2022 | Asanovski, R.; Palestri, P.; Selmi, L. | |
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications | 1-gen-2022 | Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L. | |
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise | 1-gen-2022 | Asanovski, R.; Palestri, P.; Selmi, L. |