We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V −1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20nm and 10nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1V were achieved for the GAANW- TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20nm FinFETs.
Experimental Demonstration of Improved Analog Device Performance in GAA-NW-TFETs
SELMI, Luca;
2014-01-01
Abstract
We present experimental data on analog device performance of p-type planar and gate all around (GAA) nanowire (NW) Tunnel-FETs (TFETs). 10nm diameter GAA-NW-TFETs reach a maximum transconductance efficiency of 12.7V −1 which is close to values obtained from simulations. A significant improvement of the analog performance by enhancing the electrostatics from planar TFETs to GAA-NW-TFETs with diameter of 20nm and 10nm is demonstrated. A maximum transconductance of 122 μS/μm and on-current up to 23 μA/μm at a gate overdrive of Vgt = Vd = −1V were achieved for the GAANW- TFETs. Furthermore a good output current-saturation is observed leading to high intrinsic gain up to 217 which is even higher than in 20nm FinFETs.| File | Dimensione | Formato | |
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