We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances.
PSP-based compact FinFET model describing dc and RF measurements
SERRA, Nicola;
2006-01-01
Abstract
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances.File in questo prodotto:
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