Sfoglia per Autore ESSENI, David
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage
1994-01-01 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Soft Programming in Scaled Flash EEPROM Cells
1995-01-01 Esseni, David; Selmi, Luca; Bez, R; L. RAVAZZI, L; Sangiorgi, E.
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's"
1995-01-01 B., Ricco'; Esseni, David
Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime
1995-01-01 Esseni, David; Selmi, Luca; Sangiorgi, E; Bez, R; Ricco, B.
"Characterization of Polysilicon-Gate Depletion in MOS Structures"
1996-01-01 B., Riccò; R., Versari; Esseni, David
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime"
1998-01-01 Esseni, David; H., Iway; M. SAITO AND B., Ricco
The Impact of Device Design on the Substrate Enhanced Gate Current of VLSI MOSFET's
1998-01-01 Esseni, David; Selmi, Luca; Bez, R.
A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells
1998-01-01 Esseni, David; B., Ricco
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation"
1998-01-01 Esseni, David; A., Pieracci; M. QUADRELLI AND B., Ricco
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices
1998-01-01 Esseni, David; Selmi, Luca
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects"
1999-01-01 Esseni, David; Selmi, Luca
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells
1999-01-01 Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco
The scaling properties of CHISEL and CHE injection efficiency in MOSFETs and FLASH memory cells
1999-01-01 Esseni, David; Selmi, Luca; Ghetti, A; Sangiorgi, E.
Trade-Off Between Programming Speed and Current Absorption in Flash EEPROM Memories
1999-01-01 Esseni, David; Giannasi, F.; Ricco, B.; Villa, D.
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis
1999-01-01 Selmi, Luca; Esseni, David
European Patent application no.00830546.8, filing date july 31 2000
2000-01-01 Esseni, David; Selmi, Luca; Bez, R.; Modelli, A.
Substrate Enhanced Gate Currents in CMOS Devices
2000-01-01 Driussi, Francesco; Esseni, David; Selmi, Luca; F., Piazza; Sangiorgi, Enrico
Trading-Off Programming Speed and Current Absorption in Flash Memories with the Ramped-Gate Programming Technique
2000-01-01 Esseni, David; C., Villa; S. TASSAN AND B., Ricco
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs
2000-01-01 Esseni, David; M., Mastrapasqua; G. K., Celler; F. H., Baumann; C., Fiegna; Selmi, Luca; Sangiorgi, Enrico
On the origin of the dispersion of erased threshold voltages in flash eeprom memory cells
2000-01-01 Esseni, David; Ricco, B.
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile