BADAMI, Oves Mohamed Hussein
BADAMI, Oves Mohamed Hussein
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
2016-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating
2018-01-01 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
Improved surface roughness modeling and mobility projections in thin film MOSFETs
2015-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations
2017-01-01 Pala, Marco; Badami, Oves; Esseni, David
New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits
2018-01-01 Esseni, D.; Badami, Oves Mohamed Hussein; Driussi, F.; Lizzit, D.; Pala, M.; Palestri, P.; Rollo, T.; Selmi, L.; Venica, S.
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
2017-01-01 Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Semi-classical modeling of nanoscale nMOSFETs with III-V channel
2019-01-01 Palestri, Pierpaolo; Caruso, Enrico; Badami, Oves; Driussi, Francesco; Esseni, David; Selmi, Luca
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section
2017-01-01 Badami, Oves Mohamed Hussein; Lizzit, D.; Specogna, Ruben; Esseni, David
Transport models based on NEGF and empirical pseudopotentials: A computationally viable method for self-consistent simulation of nanoscale devices
2019-01-01 Pala, Marco G.; Badami, Oves; Esseni, David