This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface roughness \Delta_rms. The model is formulated for fairly arbitrary cross-sections and biasing conditions.
Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section
BADAMI, Oves Mohamed Hussein;Lizzit, D.;SPECOGNA, Ruben;ESSENI, David
2017-01-01
Abstract
This paper presents the derivation, implementation and validation of a new model for Surface Roughness Scattering (SRS) in multi-gate FETs (MuGFETs) and gate-all-around nanowires (GAA-NW) FETs. The model employs a non linear relation between SRS matrix elements and interface fluctuations, that in planar MOSFETs allowed us to reconcile mobility simulations with experimental values for the r.m.s. interface roughness \Delta_rms. The model is formulated for fairly arbitrary cross-sections and biasing conditions.File in questo prodotto:
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