ESSENI, David

ESSENI, David  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Titolo Data di pubblicazione Autore(i) File
3D-FBK pixelsensors:Recent beam tests results with irradiated devices 1-gen-2011 Micelli, Andrea; K., Helle; H., Sandaker; B., Stugu; M., Barbero; F., Hugging; M., Karagounis; V., Kostyukhin; H., Kruger; J. W., Tsung; N., Wermes; M., Capua; S., Fazio; A., Mastroberardino; G., Susinno; C., Gallrapp; B., Digirolamo; D., Dobos; A., Larosa; H., Pernegger; S., Roe; T., Slavicek; S., Pospisil; K., Jakobs; M., Kohler; U., Parzefall; G., Darbo; G., Gariano; C., Gemmeg; A., Rovani; E., Ruscino; C., Butter; R., Bates; V., Oshea; S., Parker; M., Cavalli Sforza; S., Grinstein; I., Korokolov; C., Pradilla; K., Einsweiler; M., Garcia Sciveres; M., Borri; C., Davia; J., Freestone; S., Kolya; C. H., Lail; C., Nellist; J., Pater; R., Thompson; S. J., Watts; M., Hoeferkampm; S., Seidelm; E., Bolle; H., Gjersdal; K. N., Sjoebaek; S., Stapnes; O., Rohne; D., Suo; C., Young; P., Hansson; P., Grenier; J., Hasi; C., Kenney; M., Kocian; P., Jackson; D., Silverstein; H., Davetak; B., Dewilde; D., Tsybychev; G. F., Dallabetta; P., Gabos; M., Povoli; Cobal, Marina; Giordani, Mario; Selmi, Luca; Cristofoli, Andrea; Esseni, David; Palestri, Pierpaolo; C., Fleta; M., Lozano; G., Pellegrini; M., Boscardin; A., Bagolini; C., Piemonte; S., Ronchin; N., Zorzi; T. E., Hansen; T., Hansen; A., Kok; N., Lietaer; J., Kalliopuska; A., Oja
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis 1-gen-1999 Selmi, Luca; Esseni, David
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects" 1-gen-1999 Esseni, David; Selmi, Luca
A better understanding of the low-field mobility in Graphene Nano-ribbons 1-gen-2009 Bresciani, M; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 1-gen-2009 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs 1-gen-2003 Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E.
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs 1-gen-2004 Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 1-gen-2012 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells 1-gen-1998 Esseni, David; B., Ricco
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells 1-gen-1999 Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco
A New High Injection Efficiency Non Volatile Memory Cell: BipFlash 1-gen-2002 Esseni, David; Selmi, Luca; Roberto, Bez; Alberto, Modelli
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 1-gen-2010 J. L. P. J., van der Steen; Palestri, Pierpaolo; Esseni, David; R. J. E., Hueting
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 1-gen-2003 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
A Novel Back-Biasing Low-Leakage Technique for FinFET Forced Stacks 1-gen-2011 D., Baccarin; Esseni, David; M., Alioto
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's" 1-gen-1995 B., Ricco'; Esseni, David
A numerical model for the oscillation frequency, the amplitude and the phase-noise of MOS-current-mode-logic ring oscillators 1-gen-2010 Nocente, Michele; Fontanelli, D; Palestri, Pierpaolo; Nonis, Roberto; Esseni, David; Selmi, Luca
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 1-gen-2011 Esseni, David; Driussi, Francesco
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 1-gen-2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 1-gen-2010 Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 1-gen-2020 Pala, M.; Esseni, D.