In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SO1 MOSFETs with Lc down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for Lc = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.

A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs

PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2004

Abstract

In this paper, a Monte-Carlo simulator, including quantum corrections to the potential and an improved physically based model for surface roughness scattering is used to study the electronic transport in double gate (DG) SO1 MOSFETs with Lc down to 14nm. Our results demonstrate that, for the explored LG values, scattering still controls the ON current (IDS), which for Lc = 25nm is overestimated by about a factor of 2 by a ballistic model. By monitoring the electrons back-scattered at the source, we discuss the role of the scattering in different parts of the device.
File in questo prodotto:
File Dimensione Formato  
2004_12_IEDM_Palestri_AMonteCarloStudy.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: Non pubblico
Dimensione 254.71 kB
Formato Adobe PDF
254.71 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/883317
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 16
  • ???jsp.display-item.citation.isi??? 12
social impact