ESSENI, David
ESSENI, David
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis
1999-01-01 Selmi, Luca; Esseni, David
"A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects"
1999-01-01 Esseni, David; Selmi, Luca
"A Novel Method to Characterize Parasitic Capacitances in MOSFET's"
1995-01-01 B., Ricco'; Esseni, David
"Characterization of Polysilicon-Gate Depletion in MOS Structures"
1996-01-01 B., Riccò; R., Versari; Esseni, David
"Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation"
1998-01-01 Esseni, David; A., Pieracci; M. QUADRELLI AND B., Ricco
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime"
1998-01-01 Esseni, David; H., Iway; M. SAITO AND B., Ricco
3D-FBK pixelsensors:Recent beam tests results with irradiated devices
2011-01-01 Micelli, Andrea; K., Helle; H., Sandaker; B., Stugu; M., Barbero; F., Hugging; M., Karagounis; V., Kostyukhin; H., Kruger; J. W., Tsung; N., Wermes; M., Capua; S., Fazio; A., Mastroberardino; G., Susinno; C., Gallrapp; B., Digirolamo; D., Dobos; A., Larosa; H., Pernegger; S., Roe; T., Slavicek; S., Pospisil; K., Jakobs; M., Kohler; U., Parzefall; G., Darbo; G., Gariano; C., Gemmeg; A., Rovani; E., Ruscino; C., Butter; R., Bates; V., Oshea; S., Parker; M., Cavalli Sforza; S., Grinstein; I., Korokolov; C., Pradilla; K., Einsweiler; M., Garcia Sciveres; M., Borri; C., Davia; J., Freestone; S., Kolya; C. H., Lail; C., Nellist; J., Pater; R., Thompson; S. J., Watts; M., Hoeferkampm; S., Seidelm; E., Bolle; H., Gjersdal; K. N., Sjoebaek; S., Stapnes; O., Rohne; D., Suo; C., Young; P., Hansson; P., Grenier; J., Hasi; C., Kenney; M., Kocian; P., Jackson; D., Silverstein; H., Davetak; B., Dewilde; D., Tsybychev; G. F., Dallabetta; P., Gabos; M., Povoli; Cobal, Marina; Giordani, Mario; Selmi, Luca; Cristofoli, Andrea; Esseni, David; Palestri, Pierpaolo; C., Fleta; M., Lozano; G., Pellegrini; M., Boscardin; A., Bagolini; C., Piemonte; S., Ronchin; N., Zorzi; T. E., Hansen; T., Hansen; A., Kok; N., Lietaer; J., Kalliopuska; A., Oja
A better understanding of the low-field mobility in Graphene Nano-ribbons
2009-01-01 Bresciani, M; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors
2008-01-01 Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009-01-01 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges
2015-01-01 Cao, Jiang; Logoteta, Demetrio; Ozkaya, Sibel; Biel, Blanca; Cresti, Alessandro; Pala, Marco; Esseni, David
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs
2003-01-01 Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E.
A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs
2004-01-01 Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
2012-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A new analytical model for the energy dispersion in two-dimensional hole inversion layers
2007-01-01 DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells
1998-01-01 Esseni, David; B., Ricco
A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells
1999-01-01 Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
2014-01-01 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
A New High Injection Efficiency Non Volatile Memory Cell: BipFlash
2002-01-01 Esseni, David; Selmi, Luca; Roberto, Bez; Alberto, Modelli
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs
2010-01-01 J. L. P. J., van der Steen; Palestri, Pierpaolo; Esseni, David; R. J. E., Hueting
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| "A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part II: Physical Analysis | 1-gen-1999 | Selmi, Luca; Esseni, David | |
| "A Better Understanding of Substrate Enhanced Gate Current in VLSI MOSFET's and Flash Cells - Part I: Phenomenological Aspects" | 1-gen-1999 | Esseni, David; Selmi, Luca | |
| "A Novel Method to Characterize Parasitic Capacitances in MOSFET's" | 1-gen-1995 | B., Ricco'; Esseni, David | |
| "Characterization of Polysilicon-Gate Depletion in MOS Structures" | 1-gen-1996 | B., Riccò; R., Versari; Esseni, David | |
| "Hot-Carrier-Induced Alterations of MOSFET Capacitances: A Quantitative Monitor for Electrical Degradation" | 1-gen-1998 | Esseni, David; A., Pieracci; M. QUADRELLI AND B., Ricco | |
| "Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime" | 1-gen-1998 | Esseni, David; H., Iway; M. SAITO AND B., Ricco | |
| 3D-FBK pixelsensors:Recent beam tests results with irradiated devices | 1-gen-2011 | Micelli, Andrea; K., Helle; H., Sandaker; B., Stugu; M., Barbero; F., Hugging; M., Karagounis; V., Kostyukhin; H., Kruger; J. W., Tsung; N., Wermes; M., Capua; S., Fazio; A., Mastroberardino; G., Susinno; C., Gallrapp; B., Digirolamo; D., Dobos; A., Larosa; H., Pernegger; S., Roe; T., Slavicek; S., Pospisil; K., Jakobs; M., Kohler; U., Parzefall; G., Darbo; G., Gariano; C., Gemmeg; A., Rovani; E., Ruscino; C., Butter; R., Bates; V., Oshea; S., Parker; M., Cavalli Sforza; S., Grinstein; I., Korokolov; C., Pradilla; K., Einsweiler; M., Garcia Sciveres; M., Borri; C., Davia; J., Freestone; S., Kolya; C. H., Lail; C., Nellist; J., Pater; R., Thompson; S. J., Watts; M., Hoeferkampm; S., Seidelm; E., Bolle; H., Gjersdal; K. N., Sjoebaek; S., Stapnes; O., Rohne; D., Suo; C., Young; P., Hansson; P., Grenier; J., Hasi; C., Kenney; M., Kocian; P., Jackson; D., Silverstein; H., Davetak; B., Dewilde; D., Tsybychev; G. F., Dallabetta; P., Gabos; M., Povoli; Cobal, Marina; Giordani, Mario; Selmi, Luca; Cristofoli, Andrea; Esseni, David; Palestri, Pierpaolo; C., Fleta; M., Lozano; G., Pellegrini; M., Boscardin; A., Bagolini; C., Piemonte; S., Ronchin; N., Zorzi; T. E., Hansen; T., Hansen; A., Kok; N., Lietaer; J., Kalliopuska; A., Oja | |
| A better understanding of the low-field mobility in Graphene Nano-ribbons | 1-gen-2009 | Bresciani, M; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
| A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors | 1-gen-2008 | Comparone, G; Palestri, Pierpaolo; Esseni, David; Lucci, L; Selmi, Luca | |
| A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | 1-gen-2009 | Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak | |
| A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges | 1-gen-2015 | Cao, Jiang; Logoteta, Demetrio; Ozkaya, Sibel; Biel, Blanca; Cresti, Alessandro; Pala, Marco; Esseni, David | |
| A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs | 1-gen-2003 | Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Guegan, G.; Sangiorgi, E. | |
| A Monte Carlo Study of the Role of Scattering in Deca-nanometer MOSFETs | 1-gen-2004 | Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca | |
| A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs | 1-gen-2012 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca | |
| A new analytical model for the energy dispersion in two-dimensional hole inversion layers | 1-gen-2007 | DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| A New and Flexible Scheme for Hot-Electron Programming of Flash Memory Cells | 1-gen-1998 | Esseni, David; B., Ricco | |
| A New and Flexible Scheme for Hot-Electron Programming of Non-Volatile Memory Cells | 1-gen-1999 | Esseni, David; A., DELLA STRADA; P. CAPPELLETTI AND B., Ricco | |
| A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors | 1-gen-2014 | Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| A New High Injection Efficiency Non Volatile Memory Cell: BipFlash | 1-gen-2002 | Esseni, David; Selmi, Luca; Roberto, Bez; Alberto, Modelli | |
| A New Model for the Backscatter Coefficient in Nanoscale MOSFETs | 1-gen-2010 | J. L. P. J., van der Steen; Palestri, Pierpaolo; Esseni, David; R. J. E., Hueting |