In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.

A better understanding of the requirements for predictive modeling of strain engineering in nMOS transistors

PALESTRI, Pierpaolo;ESSENI, David;SELMI, Luca
2008-01-01

Abstract

In this paper we use a Multi-Subband-Monte-Carlo model to study the transport in nMOSFETs featuring strained silicon channels. It is shown that state-of-the-art modeling of the mobility in n-type inversion layers cannot reproduce the mobility enhancements measured in Si devices with either uniaxial or biaxial strain. Possible reasons for this limitation are analyzed in detail.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/877464
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