This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.

A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs

LIZZIT, Daniel;PALESTRI, Pierpaolo;ESSENI, David;CONZATTI, Francesco;SELMI, Luca
2012

Abstract

This paper reports a simulation study investigating the drive current in the prototypical SiGe n-type FinFET depicted in Fig.1 and for different values of the Ge content x in the Si(1−x)Gex active layer. To this purpose we performed strain simulations, band-structure calculations and Multi-Subband Monte Carlo transport simulations accounting for the effects of the Ge content on both the band-structure and scattering rates in the transistor channel. Our results suggest that the largest on-current may be obtained with a simple Si active layer.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11390/867972
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