LIZZIT, Daniel
LIZZIT, Daniel
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111)
2019-01-01 Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M.
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
2012-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors
2014-01-01 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
2022-01-01 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
2022-01-01 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs
2016-04-08 Lizzit, Daniel
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs
2016-01-01 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel
2013-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110)
2021-01-01 Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating
2018-01-01 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles
2020-01-01 Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M.
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing
2020-01-01 Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M.
Dual-Route Hydrogenation of the Graphene/Ni Interface
2019-01-01 Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R.
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon
2022-01-01 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022)
2023-01-01 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
Electron–phonon coupling in single-layer MoS2
2019-01-01 Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P.
Engineering of metal-MoS2 contacts to overcome Fermi level pinning
2022-01-01 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D.
Epitaxial growth of single-orientation high-quality MoS2 monolayers
2018-01-01 Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
2021-01-01 Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M.
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)
2019-01-01 Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) | 1-gen-2019 | Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M. | |
| A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs | 1-gen-2012 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca | |
| A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors | 1-gen-2014 | Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator | 1-gen-2022 | Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David | |
| Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts | 1-gen-2022 | Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D. | |
| Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs | 8-apr-2016 | Lizzit, Daniel | |
| An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs | 1-gen-2016 | Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel | 1-gen-2013 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca | |
| Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) | 1-gen-2021 | Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S. | |
| Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating | 1-gen-2018 | Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D. | |
| CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles | 1-gen-2020 | Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M. | |
| Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing | 1-gen-2020 | Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M. | |
| Dual-Route Hydrogenation of the Graphene/Ni Interface | 1-gen-2019 | Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R. | |
| Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon | 1-gen-2022 | Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P. | |
| Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) | 1-gen-2023 | Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P. | |
| Electron–phonon coupling in single-layer MoS2 | 1-gen-2019 | Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P. | |
| Engineering of metal-MoS2 contacts to overcome Fermi level pinning | 1-gen-2022 | Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D. | |
| Epitaxial growth of single-orientation high-quality MoS2 monolayers | 1-gen-2018 | Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S. | |
| Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies | 1-gen-2021 | Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M. | |
| Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) | 1-gen-2019 | Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S. |