LIZZIT, Daniel

LIZZIT, Daniel  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Titolo Data di pubblicazione Autore(i) File
80% Valley Polarization of Free Carriers in Singly Oriented Single-Layer WS2 on Au(111) 1-gen-2019 Beyer, H.; Rohde, G.; Grubisic Cabo, A.; Stange, A.; Jacobsen, T.; Bignardi, L.; Lizzit, D.; Lacovig, P.; Sanders, C. E.; Lizzit, S.; Rossnagel, K.; Hofmann, P.; Bauer, M.
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 1-gen-2012 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A new formulation for surface roughness limited mobility in bulk and ultra-thin-body metal–oxide–semiconductor transistors 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 1-gen-2022 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 1-gen-2022 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
Advanced models for simulation of planar and gate-all-around nanoscale MOSFETs 8-apr-2016 Lizzit, Daniel
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 1-gen-2016 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 1-gen-2013 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110) 1-gen-2021 Bignardi, L.; Mahatha, S. K.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 1-gen-2018 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
CO adsorption, reduction and oxidation on Pb(Zr,Ti)O3(001) surfaces associated with negatively charged gold nanoparticles 1-gen-2020 Apostol, N. G.; Huanu, M. A.; Lizzit, D.; Hristea, I. A.; Chirila, C. F.; Trupina, L.; Teodorescu, C. M.
Compositional Phase Change of Early Transition Metal Diselenide (VSe2 and TiSe2) Ultrathin Films by Postgrowth Annealing 1-gen-2020 Bonilla, M.; Kolekar, S.; Li, J.; Xin, Y.; Coelho, P. M.; Lasek, K.; Zberecki, K.; Lizzit, D.; Tosi, E.; Lacovig, P.; Lizzit, S.; Batzill, M.
Dual-Route Hydrogenation of the Graphene/Ni Interface 1-gen-2019 Lizzit, D.; Trioni, M. I.; Bignardi, L.; Lacovig, P.; Lizzit, S.; Martinazzo, R.; Larciprete, R.
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 1-gen-2022 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 1-gen-2023 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.
Electron–phonon coupling in single-layer MoS2 1-gen-2019 Mahatha, S. K.; Ngankeu, A. S.; Hinsche, N. F.; Mertig, I.; Guilloy, K.; Matzen, P. L.; Bianchi, M.; Sanders, C. E.; Miwa, J. A.; Bana, H.; Travaglia, E.; Lacovig, P.; Bignardi, L.; Lizzit, D.; Larciprete, R.; Baraldi, A.; Lizzit, S.; Hofmann, P.
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 1-gen-2022 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D.
Epitaxial growth of single-orientation high-quality MoS2 monolayers 1-gen-2018 Bana, H.; Travaglia, E.; Bignardi, L.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Lizzit, D.; Presel, F.; De Angelis, D.; Apostol, N.; Das, P. K.; Fujii, J.; Vobornik, I.; Larciprete, R.; Baraldi, A.; Hofmann, P.; Lizzit, S.
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies 1-gen-2021 Esseni, D.; Fontanini, R.; Lizzit, D.; Massarotto, M.; Driussi, F.; Loghi, M.
Growth and structure of singly oriented single-layer tungsten disulfide on Au(111) 1-gen-2019 Bignardi, L.; Lizzit, D.; Bana, H.; Travaglia, E.; Lacovig, P.; Sanders, C. E.; Dendzik, M.; Michiardi, M.; Bianchi, M.; Ewert, M.; Buss, L.; Falta, J.; Flege, J. I.; Baraldi, A.; Larciprete, R.; Hofmann, P.; Lizzit, S.