By combining DFT calculations and an in-house developed, ab-initio transport simulator, we investigate the transport properties of n-type contacts between 3D metallic conductors and monolayer MoS2. Moreover, the impact of buffer layers between the metal and the MoS2 is also analyzed in order to reduce the Schottky barrier and approach the Ohmic behavior of contacts.

A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator

Daniel Lizzit
Primo
;
Pedram Khakbaz;Francesco Driussi;Marco Pala;David Esseni
2022-01-01

Abstract

By combining DFT calculations and an in-house developed, ab-initio transport simulator, we investigate the transport properties of n-type contacts between 3D metallic conductors and monolayer MoS2. Moreover, the impact of buffer layers between the metal and the MoS2 is also analyzed in order to reduce the Schottky barrier and approach the Ohmic behavior of contacts.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1229064
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