By combining DFT calculations and an in-house developed, ab-initio transport simulator, we investigate the transport properties of n-type contacts between 3D metallic conductors and monolayer MoS2. Moreover, the impact of buffer layers between the metal and the MoS2 is also analyzed in order to reduce the Schottky barrier and approach the Ohmic behavior of contacts.
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
Daniel Lizzit
Primo
;Pedram Khakbaz;Francesco Driussi;Marco Pala;David Esseni
2022-01-01
Abstract
By combining DFT calculations and an in-house developed, ab-initio transport simulator, we investigate the transport properties of n-type contacts between 3D metallic conductors and monolayer MoS2. Moreover, the impact of buffer layers between the metal and the MoS2 is also analyzed in order to reduce the Schottky barrier and approach the Ohmic behavior of contacts.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Lizzit_SSE2022.pdf
non disponibili
Descrizione: Main paper
Tipologia:
Versione Editoriale (PDF)
Licenza:
Non pubblico
Dimensione
3.06 MB
Formato
Adobe PDF
|
3.06 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
