KHAKBAZ, PEDRAM

KHAKBAZ, PEDRAM  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Risultati 1 - 13 di 13 (tempo di esecuzione: 0.013 secondi).
Titolo Data di pubblicazione Autore(i) File
Development of a Fluorinated Graphene-Based Resistive Humidity Sensor 1-gen-2020 Hajian, S.; Zhang, X.; Khakbaz, P.; Tabatabaei, S. -M.; Maddipatla, D.; Narakathu, B. B.; Blair, R. G.; Atashbar, M. Z.
DFT study of graphene doping due to metal contacts 1-gen-2019 Khakbaz, Pedram; Driussi, F.; Gambi, A.; Giannozzi, P.; Venica, S.; Esseni, D.; Gaho, A.; Kataria, S.; Lemme, M. C.
Engineering of metal-MoS2 contacts to overcome Fermi level pinning 1-gen-2022 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D.
Humidity Sensing Properties of Halogenated Graphene: A Comparison of Fluorinated Graphene and Chlorinated Graphene 1-gen-2020 Hajian, S.; Khakbaz, P.; Narakathu, B. B.; Masihi, S.; Panahi, M.; Maddipatla, D.; Palaniappan, V.; Blair, R. G.; Bazuin, B. J.; Atashbar, M. Z.
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti3C2T x MXene as Ammonia Sensor: A First-Principles Study 1-gen-2018 Hajian, S.; Khakbaz, P.; Moshayedi, M.; Maddipatla, D.; Narakathu, B. B.; Turkani, V. S.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z.
Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors 1-gen-2020 Intisar Khan, Asir; Khakbaz, Pedram; Brenner, Kevin A.; Smithe, Kirby K. H.; Mleczko, Michal J.; Esseni, David; Pop, Eric
Modeling Low and High Field Uniform Transport in Monolayer MoS2 1-gen-2021 Pilotto, Alessandro; Khakbaz, Pedram; Palestri, Pierpaolo; Esseni, David
Negative capacitance field-effect transistor based on a two-dimensional ferroelectric 1-gen-2019 Soleimani, M.; Asoudegi, N.; Khakbaz, P.; Pourfath, M.
Physics based modeling for 2D semiconductors as baseline materials for novel electron devices 22-mar-2022 Khakbaz, Pedram
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach 1-gen-2022 Pilotto, A.; Khakbaz, P.; Palestri, P.; Esseni, D.
Simulation study of Fermi level depinning in metal-MoS2 contacts 1-gen-2021 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Esseni, D.
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 1-gen-2022 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study 1-gen-2019 Khakbaz, P.; Moshayedi, M.; Hajian, S.; Soleimani, M.; Narakathu, B. B.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z.