KHAKBAZ, PEDRAM
KHAKBAZ, PEDRAM
DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator
2022-01-01 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts
2022-01-01 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
Development of a Fluorinated Graphene-Based Resistive Humidity Sensor
2020-01-01 Hajian, S.; Zhang, X.; Khakbaz, P.; Tabatabaei, S. -M.; Maddipatla, D.; Narakathu, B. B.; Blair, R. G.; Atashbar, M. Z.
DFT study of graphene doping due to metal contacts
2019-01-01 Khakbaz, Pedram; Driussi, F.; Gambi, A.; Giannozzi, P.; Venica, S.; Esseni, D.; Gaho, A.; Kataria, S.; Lemme, M. C.
Engineering of metal-MoS2 contacts to overcome Fermi level pinning
2022-01-01 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D.
Humidity Sensing Properties of Halogenated Graphene: A Comparison of Fluorinated Graphene and Chlorinated Graphene
2020-01-01 Hajian, S.; Khakbaz, P.; Narakathu, B. B.; Masihi, S.; Panahi, M.; Maddipatla, D.; Palaniappan, V.; Blair, R. G.; Bazuin, B. J.; Atashbar, M. Z.
Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti3C2T x MXene as Ammonia Sensor: A First-Principles Study
2018-01-01 Hajian, S.; Khakbaz, P.; Moshayedi, M.; Maddipatla, D.; Narakathu, B. B.; Turkani, V. S.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z.
Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors
2020-01-01 Intisar Khan, Asir; Khakbaz, Pedram; Brenner, Kevin A.; Smithe, Kirby K. H.; Mleczko, Michal J.; Esseni, David; Pop, Eric
Modeling Low and High Field Uniform Transport in Monolayer MoS2
2021-01-01 Pilotto, Alessandro; Khakbaz, Pedram; Palestri, Pierpaolo; Esseni, David
Negative capacitance field-effect transistor based on a two-dimensional ferroelectric
2019-01-01 Soleimani, M.; Asoudegi, N.; Khakbaz, P.; Pourfath, M.
Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off
2023-01-01 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
Physics based modeling for 2D semiconductors as baseline materials for novel electron devices
2022-03-22 Khakbaz, Pedram
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach
2022-01-01 Pilotto, A.; Khakbaz, P.; Palestri, P.; Esseni, D.
Simulation study of Fermi level depinning in metal-MoS2 contacts
2021-01-01 Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Esseni, D.
Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study
2019-01-01 Khakbaz, P.; Moshayedi, M.; Hajian, S.; Soleimani, M.; Narakathu, B. B.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator | 1-gen-2022 | Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David | |
| Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts | 1-gen-2022 | Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D. | |
| Development of a Fluorinated Graphene-Based Resistive Humidity Sensor | 1-gen-2020 | Hajian, S.; Zhang, X.; Khakbaz, P.; Tabatabaei, S. -M.; Maddipatla, D.; Narakathu, B. B.; Blair, R. G.; Atashbar, M. Z. | |
| DFT study of graphene doping due to metal contacts | 1-gen-2019 | Khakbaz, Pedram; Driussi, F.; Gambi, A.; Giannozzi, P.; Venica, S.; Esseni, D.; Gaho, A.; Kataria, S.; Lemme, M. C. | |
| Engineering of metal-MoS2 contacts to overcome Fermi level pinning | 1-gen-2022 | Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Lizzit, D.; Esseni, D. | |
| Humidity Sensing Properties of Halogenated Graphene: A Comparison of Fluorinated Graphene and Chlorinated Graphene | 1-gen-2020 | Hajian, S.; Khakbaz, P.; Narakathu, B. B.; Masihi, S.; Panahi, M.; Maddipatla, D.; Palaniappan, V.; Blair, R. G.; Bazuin, B. J.; Atashbar, M. Z. | |
| Impact of Different Ratios of Fluorine, Oxygen, and Hydroxyl Surface Terminations on Ti3C2T x MXene as Ammonia Sensor: A First-Principles Study | 1-gen-2018 | Hajian, S.; Khakbaz, P.; Moshayedi, M.; Maddipatla, D.; Narakathu, B. B.; Turkani, V. S.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z. | |
| Large temperature coefficient of resistance in atomically thin two-dimensional semiconductors | 1-gen-2020 | Intisar Khan, Asir; Khakbaz, Pedram; Brenner, Kevin A.; Smithe, Kirby K. H.; Mleczko, Michal J.; Esseni, David; Pop, Eric | |
| Modeling Low and High Field Uniform Transport in Monolayer MoS2 | 1-gen-2021 | Pilotto, Alessandro; Khakbaz, Pedram; Palestri, Pierpaolo; Esseni, David | |
| Negative capacitance field-effect transistor based on a two-dimensional ferroelectric | 1-gen-2019 | Soleimani, M.; Asoudegi, N.; Khakbaz, P.; Pourfath, M. | |
| Ohmic Behavior in Metal Contacts to n/p-Type Transition-Metal Dichalcogenides: Schottky versus Tunneling Barrier Trade-off | 1-gen-2023 | Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D. | |
| Physics based modeling for 2D semiconductors as baseline materials for novel electron devices | 22-mar-2022 | Khakbaz, Pedram | |
| Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach | 1-gen-2022 | Pilotto, A.; Khakbaz, P.; Palestri, P.; Esseni, D. | |
| Simulation study of Fermi level depinning in metal-MoS2 contacts | 1-gen-2021 | Khakbaz, P.; Driussi, F.; Giannozzi, P.; Gambi, A.; Esseni, D. | |
| Titanium Carbide MXene as NH3 Sensor: Realistic First-Principles Study | 1-gen-2019 | Khakbaz, P.; Moshayedi, M.; Hajian, S.; Soleimani, M.; Narakathu, B. B.; Bazuin, B. J.; Pourfath, M.; Atashbar, M. Z. |