Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which in turn results in large contact resistances. In this work, we made use of Density Functional Theory (DFT) to study the origin of FLP in MoS2 contacts with a variety of metals. We also reported how the Fermi level de-pinning could be attained by controlling the distance between the metal and MoS2. In this respect, the metal-MoS2 contacts can be engineered by means of the insertion of proper buffer layers and the use of back-gated structures. This results in a practically zeroed Schottky barrier heights for some specific metal-MoS2 stacks, which it is crucial to attain Ohmic contacts with low series resistances.

Engineering of metal-MoS2 contacts to overcome Fermi level pinning

Khakbaz, P.
Primo
;
Driussi, F.
Secondo
;
Giannozzi, P.;Gambi, A.;Lizzit, D.;Esseni, D.
2022-01-01

Abstract

Fermi level pinning (FLP) in metal-MoS2 contacts induces large Schottky barrier heights which in turn results in large contact resistances. In this work, we made use of Density Functional Theory (DFT) to study the origin of FLP in MoS2 contacts with a variety of metals. We also reported how the Fermi level de-pinning could be attained by controlling the distance between the metal and MoS2. In this respect, the metal-MoS2 contacts can be engineered by means of the insertion of proper buffer layers and the use of back-gated structures. This results in a practically zeroed Schottky barrier heights for some specific metal-MoS2 stacks, which it is crucial to attain Ohmic contacts with low series resistances.
File in questo prodotto:
File Dimensione Formato  
1-s2.0-S0038110122001502-main.pdf

non disponibili

Descrizione: Articolo principale
Tipologia: Versione Editoriale (PDF)
Licenza: Non pubblico
Dimensione 4.66 MB
Formato Adobe PDF
4.66 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
SSE_rev_Final.pdf

accesso aperto

Descrizione: articolo in pre-print
Tipologia: Documento in Pre-print
Licenza: Creative commons
Dimensione 661.34 kB
Formato Adobe PDF
661.34 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1224870
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 8
  • ???jsp.display-item.citation.isi??? 7
social impact