DRIUSSI, Francesco

DRIUSSI, Francesco  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Risultati 1 - 20 di 119 (tempo di esecuzione: 0.036 secondi).
Titolo Data di pubblicazione Autore(i) File
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 1-gen-2010 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
A model for the jitter of avalanche photodiodes with separate absorption and multiplication regions 1-gen-2020 Rosset, F.; Pilotto, A.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; De Angelis, D.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.; Palestri, P.
A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions 1-gen-2019 Pilotto, A.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Menk, R. H.; Nichetti, C.; Steinhartova, T.
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 1-gen-2003 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 1-gen-2011 Esseni, David; Driussi, Francesco
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 1-gen-2010 Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 1-gen-2022 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 1-gen-2022 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
An Improved Nonlocal History-Dependent Model for Gain and Noise in Avalanche Photodiodes Based on Energy Balance Equation 1-gen-2018 Nichetti, C.; Pilotto, A.; Palestri, P.; Selmi, L.; Antonelli, M.; Arfelli, F.; Biasiol, G.; Cautero, G.; Driussi, F.; Klein, N. Y.; Menk, R. H.; Steinhartova, T.
An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes 1-gen-2018 Pilotto, Alessandro; Palestri, Pierpaolo; Selmi, Luca; Antonelli, Matias; Arfelli, Fulvia; Biasiol, Giorgio; Cautero, Giuseppe; Driussi, Francesco; Menk, Ralf H.; Nichetti, Camilla; Steinhartova, Tereza
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 1-gen-2009 Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 1-gen-2007 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 1-gen-2018 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions 1-gen-2023 Massarotto, M.; Segatto, M.; Driussi, F.; Affanni, A.; Lancaster, S.; Slesazeck, S.; Mikolajick, T.; Esseni, D.
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 1-gen-2007 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 1-gen-2022 Fontanini, R.; Segatto, M.; Nair, K. S.; Holzer, M.; Driussi, F.; Hausler, I.; Koch, C. T.; Dubourdieu, C.; Deshpande, V.; Esseni, D.
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 1-gen-2007 Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 1-gen-2002 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza