DRIUSSI, Francesco

DRIUSSI, Francesco  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

Mostra records
Risultati 1 - 20 di 108 (tempo di esecuzione: 0.019 secondi).
Titolo Data di pubblicazione Autore(i) File
A Consistent Explanation of the Role of the SiN Composition on the Program/Retention Characteristics of MANOS and NROM like Memories 1-gen-2010 Vianello, Elisa; Nowak, E; Perniola, L; Driussi, Francesco; Blaise, P; Molas, G; DE SALVO, B; Selmi, Luca
A new Statistical Model to extract the Stress Induced Oxide Trap number and the Probability Density Distribution of the Gate Current Produced by a Single Trap 1-gen-2003 Driussi, Francesco; Widdershoven, F.; Esseni, David; VAN DUUREN, M. J.
A Quantitative Error Analysis of the Mobility Extraction According to the Matthiessen Rule in Advanced MOS Transistors 1-gen-2011 Esseni, David; Driussi, Francesco
A simulation study of the Punch-through Assisted Hot Holes Injection mechanism for non-volatile-memory cells 1-gen-2010 Iellina, Matteo; Palestri, Pierpaolo; Akil, N.; VAN DUUREN, M.; Driussi, Francesco; Esseni, David; Selmi, Luca
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications 1-gen-2009 Golubovic, Ds; van Duuren, Mj; Akil, N; Arreghini, Antonio; Driussi, Francesco
Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs 1-gen-2007 DE MICHIELIS, Marco; Esseni, David; Driussi, Francesco
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Backscattering and common-base current gain of the Graphene Base Transistor (GBT) 1-gen-2015 Venica, Stefano; Driussi, Francesco; Palestri, Pierpaolo; Selmi, Luca
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 1-gen-2018 Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
Characterization and Modeling of long term retention in SONOS Non Volatile Memories 1-gen-2007 Arreghini, A; Akil, N; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation 1-gen-2022 Fontanini, R.; Segatto, M.; Nair, K. S.; Holzer, M.; Driussi, F.; Hausler, I.; Koch, C. T.; Dubourdieu, C.; Deshpande, V.; Esseni, D.
Comparison of modeling approaches for the capacitance-voltage and current voltage characteristics of advanced gate stacks 1-gen-2007 Palestri, Pierpaolo; N., Barin; D., Brunel; C., Busseret; A., Campera; P. A., Childs; Driussi, Francesco; C., Fiegna; G., Fiori; R., Gusmeroli; G., Iannaccone; M., Karner; H., Kosina; A. L., Lacaita; E., Langer; B., Majkusiak; C., Monzio Compagnoni; A., Poncet; E., Sangiorgi; Selmi, Luca; A. S., Spinelli; J., Walczak
Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime 1-gen-2002 Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza
Dependability Assessment of Transfer Length Method to Extract the Metal–Graphene Contact Resistance 1-gen-2020 Driussi, Francesco; Venica, Stefano; Gahoi, Amit; Kataria, Satender; Lemme, Max C.; Palestri, Pierpaolo
Dependable Contact Related Parameter Extraction in Graphene–Metal Junctions 1-gen-2020 Gahoi, A.; Kataria, S.; Driussi, F.; Venica, S.; Pandey, H.; Esseni, D.; Selmi, L.; Lemme, M. C.
Detailed characterization and critical discussion of series resistance in graphene-metal contacts 1-gen-2017 Venica, Stefano; Driussi, Francesco; Gahoi, Amit; Passi, Vikram; Palestri, Pierpaolo; Lemme, Max C.; Selmi, Luca
DFT study of graphene doping due to metal contacts 1-gen-2019 Khakbaz, Pedram; Driussi, F.; Gambi, A.; Giannozzi, P.; Venica, S.; Esseni, D.; Gaho, A.; Kataria, S.; Lemme, M. C.
Direct Probing of Trapped Charge Dynamics in SiN by Kelvin Force Microscopy 1-gen-2010 Vianello, Elisa; Nowak, E; Mariolle, D; Chevalier, N; Perniola, L; Molas, G; Colonna, J; Driussi, Francesco; Selmi, Luca
Does Multi Trap Assisted Tunneling Explain the Oxide Thickness Dependence of the Statistics of SILC in FLASH Memory Arrays ? 1-gen-2006 Vianello, E; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M; Widdershoven, F.
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 1-gen-2022 Driussi, F.; Esseni, D.; Lizzit, D.; Palestri, P.