In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.
Backscattering and common-base current gain of the Graphene Base Transistor (GBT)
VENICA, Stefano;DRIUSSI, Francesco;PALESTRI, Pierpaolo;SELMI, Luca
2015-01-01
Abstract
In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.File in questo prodotto:
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