In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.

Backscattering and common-base current gain of the Graphene Base Transistor (GBT)

VENICA, Stefano;DRIUSSI, Francesco;PALESTRI, Pierpaolo;SELMI, Luca
2015-01-01

Abstract

In this paper, we investigate electron transport and backscattering in the EBI and BCI as possible root causes of the base current and of the common-base current gain degradation in GBTs by means of a Monte Carlo (MC) transport model. Backscattering limited αF values are found to be much higher than experiments in [1, 2], suggesting that state-of-the art technology is still far from being optimized, but they are low enough to limit the maximum achievable performance.
2015
978-88-9030-695-2
File in questo prodotto:
File Dimensione Formato  
INFOS15_Venica.pdf

accesso aperto

Descrizione: Articolo completo
Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 446.83 kB
Formato Adobe PDF
446.83 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1065676
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact