Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features. (C) 2009 Elsevier B.V. All rights reserved.
Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications
ARREGHINI, Antonio;DRIUSSI, Francesco
2009-01-01
Abstract
Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features. (C) 2009 Elsevier B.V. All rights reserved.File in questo prodotto:
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