Negative capacitance field effect transistors (NCFETs) based on ferroelectric materials have been the focus of intensive research activities because of their relatively small sub-Threshold swing. This work proposes and presents a comprehensive study of a NCFET based on few-layer alpha-In2 Se3 as the ferroelectric in order to reduce the sub-Threshold swing through voltage amplification effect. By employing first principles electronic structure calculations, the Landau constants of mono and few-layer alpha-In2 Se3 are extracted which were utilized for analyzing the characteristics of a NCFET with a monolayer MoS2 as the channel material. Sub-Threshold swings in the range of sim 27-59 mV/dec were achieved for few-layer alpha-In2 Se3 that can be further improved by increasing the thickness of the ferroelectric layer and by using a thinner or high-kappa insulate layer.
Negative capacitance field-effect transistor based on a two-dimensional ferroelectric
Khakbaz P.;
2019-01-01
Abstract
Negative capacitance field effect transistors (NCFETs) based on ferroelectric materials have been the focus of intensive research activities because of their relatively small sub-Threshold swing. This work proposes and presents a comprehensive study of a NCFET based on few-layer alpha-In2 Se3 as the ferroelectric in order to reduce the sub-Threshold swing through voltage amplification effect. By employing first principles electronic structure calculations, the Landau constants of mono and few-layer alpha-In2 Se3 are extracted which were utilized for analyzing the characteristics of a NCFET with a monolayer MoS2 as the channel material. Sub-Threshold swings in the range of sim 27-59 mV/dec were achieved for few-layer alpha-In2 Se3 that can be further improved by increasing the thickness of the ferroelectric layer and by using a thinner or high-kappa insulate layer.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
