Negative capacitance field effect transistors (NCFETs) based on ferroelectric materials have been the focus of intensive research activities because of their relatively small sub-Threshold swing. This work proposes and presents a comprehensive study of a NCFET based on few-layer alpha-In2 Se3 as the ferroelectric in order to reduce the sub-Threshold swing through voltage amplification effect. By employing first principles electronic structure calculations, the Landau constants of mono and few-layer alpha-In2 Se3 are extracted which were utilized for analyzing the characteristics of a NCFET with a monolayer MoS2 as the channel material. Sub-Threshold swings in the range of sim 27-59 mV/dec were achieved for few-layer alpha-In2 Se3 that can be further improved by increasing the thickness of the ferroelectric layer and by using a thinner or high-kappa insulate layer.

Negative capacitance field-effect transistor based on a two-dimensional ferroelectric

Khakbaz P.;
2019-01-01

Abstract

Negative capacitance field effect transistors (NCFETs) based on ferroelectric materials have been the focus of intensive research activities because of their relatively small sub-Threshold swing. This work proposes and presents a comprehensive study of a NCFET based on few-layer alpha-In2 Se3 as the ferroelectric in order to reduce the sub-Threshold swing through voltage amplification effect. By employing first principles electronic structure calculations, the Landau constants of mono and few-layer alpha-In2 Se3 are extracted which were utilized for analyzing the characteristics of a NCFET with a monolayer MoS2 as the channel material. Sub-Threshold swings in the range of sim 27-59 mV/dec were achieved for few-layer alpha-In2 Se3 that can be further improved by increasing the thickness of the ferroelectric layer and by using a thinner or high-kappa insulate layer.
2019
978-1-7281-0940-4
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1189531
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