PALA, Marco Giuseppe

PALA, Marco Giuseppe  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

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Titolo Data di pubblicazione Autore(i) File
3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity 1-gen-2009 Bescond, M; Lannoo, M; Michelini, F; Raymond, L; Pala, M
A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs 1-gen-2011 Cresti, A; Pala, M; Poli, S; Mouis, M; Ghibaudo, G
A computational study of van der Waals tunnel transistors: fundamental aspects and design challenges 1-gen-2015 Cao, Jiang; Logoteta, Demetrio; Ozkaya, Sibel; Biel, Blanca; Cresti, Alessandro; Pala, Marco; Esseni, David
A Fokker-Planck-based Monte Carlo method for electronic transport and avalanche simulation in single-photon avalanche diodes 1-gen-2022 Helleboid, R; Rideau, D; Nicholson, I; Grebot, J; Mamdy, B; Mugny, G; Basset, M; Agnew, M; Golanski, D; Pellegrini, S; Saint-Martin, J; Pala, M; Dollfus, P
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies 1-gen-2014 Desalvo, B; Morin, P; Pala, M; Et, Al.
A new transport phenomenon in nanostructures: a mesoscopic analog of the Braess paradox encountered in road networks 1-gen-2012 Pala, M; Sellier, H; Hackens, B; Martins, F; Bayot, V; Huant, S
A review of selected topics in physics based modeling for tunnel field-effect transistors 1-gen-2017 Esseni, David; Pala, Marco; Palestri, Pierpaolo; Alper, Cem; Rollo, Tommaso
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 1-gen-2011 Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.; Selmi, Luca
A Steep-Slope MoS2-Nanoribbon MOSFET Based on an Intrinsic Cold-Contact Effect 1-gen-2019 Logoteta, D; Pala, M; Choukroun, J; Dollfus, P; Iannaccone, G
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD 1-gen-2016 Mugny, G; Pereira, F; Rideau, D; Triozon, F; Niquet, Y; Pala, M; Garetto, D; Delerue, C
A study of metal-MoS2 contacts by using an in-house developed ab-initio transport simulator 1-gen-2022 Lizzit, Daniel; Khakbaz, Pedram; Driussi, Francesco; Pala, Marco; Esseni, David
A three-dimensional solver of the Schrodinger equation in momentum space for the detailed simulation of nanostructures 1-gen-2002 Pala, M; Iannaccone, G
Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism 1-gen-2020 Pala, M.; Esseni, D.
Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 1-gen-2023 M'Foukh, A; Saint-Martin, J; Dollfus, P; Pala, M
Ab-initio transport simulations unveil the Schottky versus Tunneling barrier trade-off in metal-TMD contacts 1-gen-2022 Lizzit, D.; Khakbaz, P.; Driussi, F.; Pala, M.; Esseni, D.
Assessment of the Electrical Performance of Short Channel InAs and Strained Si Nanowire FETs 1-gen-2017 Grillet, C; Logoteta, D; Cresti, A; Pala, M
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation 1-gen-2022 Dollfus, P; Saint-Martin, J; Cazimajou, T; Helleboid, R; Pilotto, A; Rideau, D; Bournel, A; Pala, M
Backscattering coefficient in gate-all-around 3C-SiC nanowire FETs 1-gen-2009 Rogdakis, K; Bano, E; Pala, M; Et, Al.
Beyond CMOS 1-gen-2013 Iannaccone, G.; Fiori, G.; Reggiani, S.; Pala, M.
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 1-gen-2014 Esseni, David; Pala, M. G.; Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca; Li, M.; Snider, G.; Jena, D.; Xing, H. G.