A Ge-based single-photon-avalanche-diode (SPAD) is investigated by using self-consistent 3-D Monte Carlo simulation including the presence of a passive quenching circuit. This approach of transport allows us to capture all stochastic features of carrier transport and SPAD operation. We analyze particularly the probabilistic character of the quenching mechanism and its dependence on the parameters (resistance and capacitance) of the passive quenching circuit.
Avalanche breakdown and quenching in Ge SPAD using 3D Monte Carlo simulation
Pilotto, A;Pala, M
2022-01-01
Abstract
A Ge-based single-photon-avalanche-diode (SPAD) is investigated by using self-consistent 3-D Monte Carlo simulation including the presence of a passive quenching circuit. This approach of transport allows us to capture all stochastic features of carrier transport and SPAD operation. We analyze particularly the probabilistic character of the quenching mechanism and its dependence on the parameters (resistance and capacitance) of the passive quenching circuit.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
