CONZATTI, Francesco
CONZATTI, Francesco
DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs
2012-01-01 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs
2011-01-01 Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.; Selmi, Luca
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study
2008-01-01 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study
2009-01-01 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study
2012-01-01 Pala M., G; Esseni, David; Conzatti, Francesco
Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study
2012-01-01 Pala, M. G.; Esseni, D.; Conzatti, F.
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
2013-01-01 Conzatti, F; Pala, Mg; Esseni, D; Bano, E
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs
2012-01-01 Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations
2011-01-01 Conzatti, Francesco; Serra, Nicola; Esseni, David; De Michielis, M.; Paussa, Alan; Palestri, Pierpaolo; Selmi, Luca; Thomas, S. M.; Whall, T. E.; Leadley, D.; Parker, E. H. C.; Witters, L.; Hytch, M. J.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Doornbos, G.; Vellianitis, G.; van Dal, M. J. H.; Lander, R. J. P.
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials
2012-01-01 Conzatti, Francesco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Numerical simulation of advanced CMOS and beyond CMOS devices
2012-05-04 Conzatti, Francesco
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
2011-01-01 Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M.
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors
2011-01-01 DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors
2010-01-01 Paussa, Alan; Conzatti, Francesco; Breda, Dimitri; Vermiglio, Rossana; Esseni, David; Palestri, Pierpaolo
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
2010-01-01 Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs
2012-01-01 Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs
2012-01-01 Conzatti, Francesco; Pala, M. G.; Esseni, David
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs | 1-gen-2012 | Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca | |
| A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs | 1-gen-2011 | Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E.; Selmi, Luca | |
| Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study | 1-gen-2008 | Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo | |
| Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study | 1-gen-2009 | Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo | |
| Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study | 1-gen-2012 | Pala M., G; Esseni, David; Conzatti, Francesco | |
| Impact of interface traps on the IV curves of InAs Tunnel-FETs and MOSFETs: A full quantum study | 1-gen-2012 | Pala, M. G.; Esseni, D.; Conzatti, F. | |
| Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs | 1-gen-2013 | Conzatti, F; Pala, Mg; Esseni, D; Bano, E | |
| Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs | 1-gen-2012 | Conzatti, Francesco; Pala, M. G.; Esseni, David; Bano, E. | |
| Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations | 1-gen-2011 | Conzatti, Francesco; Serra, Nicola; Esseni, David; De Michielis, M.; Paussa, Alan; Palestri, Pierpaolo; Selmi, Luca; Thomas, S. M.; Whall, T. E.; Leadley, D.; Parker, E. H. C.; Witters, L.; Hytch, M. J.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Doornbos, G.; Vellianitis, G.; van Dal, M. J. H.; Lander, R. J. P. | |
| Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials | 1-gen-2012 | Conzatti, Francesco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Numerical simulation of advanced CMOS and beyond CMOS devices | 4-mag-2012 | Conzatti, Francesco | |
| On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors | 1-gen-2011 | Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M. | |
| On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors | 1-gen-2011 | DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca | |
| Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors | 1-gen-2010 | Paussa, Alan; Conzatti, Francesco; Breda, Dimitri; Vermiglio, Rossana; Esseni, David; Palestri, Pierpaolo | |
| Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs | 1-gen-2010 | Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs | 1-gen-2012 | Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca | |
| Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs | 1-gen-2012 | Conzatti, Francesco; Pala, M. G.; Esseni, David |