CONZATTI, Francesco

CONZATTI, Francesco  

DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.024 secondi).
Titolo Data di pubblicazione Autore(i) File
A Multi-Subband Monte Carlo study of electron transport in strained SiGe n-type FinFETs 1-gen-2012 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Conzatti, Francesco; Selmi, Luca
A simulation study of strain induced performance enhancements in InAs nanowire Tunnel-FETs 1-gen-2011 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano; Selmi, Luca
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 1-gen-2009 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 1-gen-2008 Conzatti, Francesco; DE MICHIELIS, Marco; Esseni, David; Palestri, Pierpaolo
Impact of Interface Traps on the IV Curves of InAs Tunnel-FETs and MOSFETs: A Full Quantum Study 1-gen-2012 Pala M., G; Esseni, David; Conzatti, Francesco
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs 1-gen-2012 Conzatti, Francesco; M. G., Pala; Esseni, David; E., Bano
Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations 1-gen-2011 Conzatti, Francesco; Serra, Nicola; Esseni, David; De Michielis, M.; Paussa, Alan; Palestri, Pierpaolo; Selmi, Luca; Thomas, S. M.; Whall, T. E.; Leadley, D.; Parker, E. H. C.; Witters, L.; Hytch, M. J.; Snoeck, E.; Wang, T. J.; Lee, W. C.; Doornbos, G.; Vellianitis, G.; van Dal, M. J. H.; Lander, R. J. P.
Modeling of Field-Effect-Transistors with Strained and Alternative Channel Materials 1-gen-2012 Conzatti, Francesco; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Numerical simulation of advanced CMOS and beyond CMOS devices 4-mag-2012 Conzatti, Francesco
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 1-gen-2011 Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M.
On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors 1-gen-2011 DE MICHIELIS, Marco; Conzatti, Francesco; Esseni, David; Selmi, Luca
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 1-gen-2010 Paussa, Alan; Conzatti, Francesco; Breda, Dimitri; Vermiglio, Rossana; Esseni, David; Palestri, Pierpaolo
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 1-gen-2010 Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs 1-gen-2012 Conzatti, Francesco; Pala, M; Esseni, David; Bano, E; Selmi, Luca
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 1-gen-2012 Conzatti, Francesco; Pala M., G; Esseni, David