This paper employs a state-of-the-art semi-classical transport model for inversion layers to analyze the Ion in Si, sSi, Ge and sGe n- and p-MOSFETs by accounting for all the relevant scattering mechanisms (including the remote surface-optical phonons (SOph) and remote Coulomb scattering (remQ) related to high-κ dielectrics), in which strain is implicitly introduced by a modification of the band structure. Our models are first validated against experiments for both mobility and IDS in nanoscale transistors. Then the Ion in Ge and Si MOSFETs is compared for different crystal orientations and strain conditions.

Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs

CONZATTI, Francesco;TONIUTTI, Paolo;ESSENI, David;PALESTRI, Pierpaolo;SELMI, Luca
2010-01-01

Abstract

This paper employs a state-of-the-art semi-classical transport model for inversion layers to analyze the Ion in Si, sSi, Ge and sGe n- and p-MOSFETs by accounting for all the relevant scattering mechanisms (including the remote surface-optical phonons (SOph) and remote Coulomb scattering (remQ) related to high-κ dielectrics), in which strain is implicitly introduced by a modification of the band structure. Our models are first validated against experiments for both mobility and IDS in nanoscale transistors. Then the Ion in Ge and Si MOSFETs is compared for different crystal orientations and strain conditions.
2010
9781442474185
File in questo prodotto:
File Dimensione Formato  
Conzatti_IEDM2010.PDF

non disponibili

Tipologia: Documento in Post-print
Licenza: Non pubblico
Dimensione 182.72 kB
Formato Adobe PDF
182.72 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/883203
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 0
social impact