TONIUTTI, Paolo

TONIUTTI, Paolo  

DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)  

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Titolo Data di pubblicazione Autore(i) File
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 1-gen-2009 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices 1-gen-2012 Toniutti, Paolo; Clerc, R; Palestri, Pierpaolo; Diouf, C; Cros, A; Esseni, David; Boeuf, F; Ghibaudo, G; Selmi, Luca
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks 1-gen-2010 BUFLER F., M; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models 1-gen-2010 Sangiorgi, E; Alexander, C; Asenov, A; AUBRY-FORTUNA, V; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, D; FENOUILLET-BERANGER, C; Fiegna, C; Fiori, G; Ghetti, A; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, S; Palestri, P; Peikert, V; Reggiani, S; Riddet, C; SAINT-MARTIN, J; Schenk, A; Selmi, L; Silvestri, L; Walczak, J; Toniutti, P
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 1-gen-2010 Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo
Impact of the technology boosters on the MOSFET performance 4-mag-2012 Toniutti, Paolo
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks 1-gen-2012 Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors 1-gen-2011 Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M.
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs 1-gen-2010 Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics 1-gen-2010 Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca