The understanding of the charge transport in nano-scale CMOS device is a very challenging issue that requires a physics-based modelling approach. I use a Multi Subband Monte Carlo simulation framework to assess the effects of some of the mostly used techniques to overcome the performances of the conventional ultra-scaled MOSFETs
Impact of the technology boosters on the MOSFET performance / Paolo Toniutti - Udine. , 2012 May 04. 24. ciclo
Impact of the technology boosters on the MOSFET performance
Toniutti, Paolo
2012-05-04
Abstract
The understanding of the charge transport in nano-scale CMOS device is a very challenging issue that requires a physics-based modelling approach. I use a Multi Subband Monte Carlo simulation framework to assess the effects of some of the mostly used techniques to overcome the performances of the conventional ultra-scaled MOSFETsFile in questo prodotto:
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10990_44_Toniutti_Tesi.pdf
Open Access dal 04/11/2013
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Tesi di dottorato
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