TONIUTTI, Paolo
TONIUTTI, Paolo
DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs
2009-01-01 Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak
An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices
2012-01-01 Toniutti, Paolo; Clerc, R; Palestri, Pierpaolo; Diouf, C; Cros, A; Esseni, David; Boeuf, F; Ghibaudo, G; Selmi, Luca
Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks
2010-01-01 Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo
Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models
2010-01-01 Sangiorgi, E; Alexander, C; Asenov, A; AUBRY-FORTUNA, V; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, D; FENOUILLET-BERANGER, C; Fiegna, C; Fiori, G; Ghetti, A; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, S; Palestri, P; Peikert, V; Reggiani, S; Riddet, C; SAINT-MARTIN, J; Schenk, A; Selmi, L; Silvestri, L; Walczak, J; Toniutti, P
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs
2010-01-01 Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo
Impact of the technology boosters on the MOSFET performance
2012-05-04 Toniutti, Paolo
On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks
2012-01-01 Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca
On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors
2011-01-01 Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M.
Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs
2010-01-01 Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics
2010-01-01 Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs | 1-gen-2009 | Palestri, Pierpaolo; C., Alexander; A., Asenov; V., Aubry Fortuna; G., Baccarani; A., Bournel; M., Braccioli; B., Cheng; P., Dollfus; A., Esposito; Esseni, David; C., Fenouillet Beranger; C., Fiegna; G., Fiori; A., Ghetti; G., Iannaccone; A., Martinez; B., Majkusiak; S., Monfray; V., Peikert; S., Reggiani; C., Riddet; J., Saint Martin; E., Sangiorgi; A., Schenk; Selmi, Luca; L., Silvestri; Toniutti, Paolo; J., Walczak | |
| An improved procedure to extract the limiting carrier velocity in ultra scaled CMOS devices | 1-gen-2012 | Toniutti, Paolo; Clerc, R; Palestri, Pierpaolo; Diouf, C; Cros, A; Esseni, David; Boeuf, F; Ghibaudo, G; Selmi, Luca | |
| Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate Stacks | 1-gen-2010 | Bufler, F. M.; AUBRY FORTUNA, V; Bournel, A; Braccioli, M; Dollfus, P; Esseni, David; Fiegna, C; Gamizk, F; DE MICHIELIS, Marco; Palestri, Pierpaolo; SAINT MARTIN, J; Sampedrok, C; Sangiorgi, E; Selmi, Luca; Toniutti, Paolo | |
| Drain Current Computation in Nanoscale nMOSFETs: Comparison of Transport Models | 1-gen-2010 | Sangiorgi, E; Alexander, C; Asenov, A; AUBRY-FORTUNA, V; Baccarani, G; Bournel, A; Braccioli, M; Cheng, B; Dollfus, P; Esposito, A; Esseni, D; FENOUILLET-BERANGER, C; Fiegna, C; Fiori, G; Ghetti, A; Iannaccone, G; Martinez, A; Majkusiak, B; Monfray, S; Palestri, P; Peikert, V; Reggiani, S; Riddet, C; SAINT-MARTIN, J; Schenk, A; Selmi, L; Silvestri, L; Walczak, J; Toniutti, P | |
| Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs | 1-gen-2010 | Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo | |
| Impact of the technology boosters on the MOSFET performance | 4-mag-2012 | Toniutti, Paolo | |
| On the origin of the mobility reduction in n- and p-metal-oxide-semiconductor field effect transistors with hafnium-based/metal gate stacks | 1-gen-2012 | Toniutti, Paolo; Palestri, Pierpaolo; Esseni, David; Driussi, Francesco; DE MICHIELIS, Marco; Selmi, Luca | |
| On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors | 1-gen-2011 | Thomas, S. M.; Prest, M. J.; Whall, T. E.; Leadley, D. R.; Toniutti, Paolo; Conzatti, Francesco; Esseni, David; Donetti, L.; Gamiz, F.; Lander, R. J. P.; Vellianitis, G.; Hellstrom, P. E.; Ostling, M. | |
| Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs | 1-gen-2010 | Conzatti, Francesco; Toniutti, Paolo; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics | 1-gen-2010 | Toniutti, Paolo; DE MICHIELIS, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca |