We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value. The results reveal that the film thickness dependence of mobility in III-V MOSFETs is weaker than predicted by the T6w law typically observed in silicon devices.

Improved surface roughness modeling and mobility projections in thin film MOSFETs

BADAMI, Oves Mohamed Hussein;CARUSO, Enrico;LIZZIT, Daniel;ESSENI, David;PALESTRI, Pierpaolo;SELMI, Luca
2015

Abstract

We report mobility simulations for long channel Si and InGaAs MOSFETs as a function of the semiconductor film thickness and inversion charge. Calculations account for numerous relevant scattering mechanisms and surface roughness is described by the recently developed non-linear model [1]. Reasonable agreement with available experiments is obtained employing the measured surface roughness r.m.s. value. The results reveal that the film thickness dependence of mobility in III-V MOSFETs is weaker than predicted by the T6w law typically observed in silicon devices.
978-1-4673-7135-3
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1082997
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