CARUSO, Enrico

CARUSO, Enrico  

DPIA - DIPARTIMENTO POLITECNICO DI INGEGNERIA E ARCHITETTURA  

Mostra records
Risultati 1 - 20 di 24 (tempo di esecuzione: 0.043 secondi).
Titolo Data di pubblicazione Autore(i) File
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 1-gen-2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Improved surface roughness modeling and mobility projections in thin film MOSFETs 1-gen-2015 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 1-gen-2016 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Modeling 1/f and Lorenzian noise in III-V MOSFETs 1-gen-2019 Caruso, E.; Bettetti, F.; DEL LINZ, Leonida; Pin, D.; Segatto, M.; Palestri, P.
Modeling approaches for band-structure calculation in III-V FET quantum wells 1-gen-2015 Caruso, Enrico; Zerveas, G.; Baccarani, G.; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E.; Gnudi, A.; Grassi, R.; Luisier, M.; Markussen, T.; Palestri, Pierpaolo; Schenk, A.; Selmi, Luca; Sousa, M.; Stokbro, K.; Visciarelli, M.
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: from advanced models for band structures, electrostatics and transport to TCAD 1-gen-2017 Selmi, L; Caruso, E; Carapezzi, S; Visciarelli, M; Gnani, E; Zagni, N; Pavan, P; Palestri, P; Esseni, D; Gnudi, A; Reggiani, S; Puglisi F., M; Verzellesi, G.
On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes 1-gen-2017 Caruso, Enrico; Pin, Alessandro; Palestri, Pierpaolo; Selmi, Luca
Performance evaluation of III-V compound semiconductor n-MOSFETs employing calibrated multi-valley and Multi-Subband Monte Carlo transport models 23-mar-2017 Caruso, Enrico
Performance Projection of III-V Ultra-Thin-Body, FinFET, and Nanowire MOSFETs for two Next-Generation Technology Nodes 1-gen-2017 Rau, M.; Caruso, Enrico; Lizzit, D.; Palestri, Pierpaolo; Esseni, David; Schenk, A.; Selmi, Luca; Luisier, M.
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 1-gen-2016 Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks 1-gen-2018 Caruso, E.; Lin, J.; Burke, K. F.; Cherkaoui, K.; Esseni, D.; Gity, F.; Monaghan, S.; Palestri, P.; Hurley, P.; Selmi, L.
Quasi-Ballistic Gamma - and L-Valleys Transport in Ultrathin Body Strained (111) GaAs nMOSFETs 1-gen-2016 Caruso, Enrico; Palestri, Pierpaolo; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Selmi, Luca
Relationship between capacitance and conductance in MOS capacitors 1-gen-2019 Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Floyd, L.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, P. K.
The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in {MOS} Systems 1-gen-2020 Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance 1-gen-2017 Hahn, H.; Deshpande, V.; Caruso, E.; Sant, S.; O'Connor, E.; Baumgartner, Y.; Sousa, M.; Caimi, D.; Olziersky, A.; Palestri, P.; Selmi, L.; Schenk, A.; Czornomaz, L.
Semi-classical modeling of nanoscale nMOSFETs with III-V channel 1-gen-2019 Palestri, Pierpaolo; Caruso, Enrico; Badami, Oves; Driussi, Francesco; Esseni, David; Selmi, Luca
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 1-gen-2015 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 1-gen-2015 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca