We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors
PALESTRI, Pierpaolo;CARUSO, Enrico;DRIUSSI, Francesco;ESSENI, David;LIZZIT, Daniel;OSGNACH, Patrik;VENICA, Stefano;SELMI, Luca
2015-01-01
Abstract
We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.File in questo prodotto:
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