We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed.
Titolo: | State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors |
Autori: | |
Data di pubblicazione: | 2015 |
Abstract: | We review the Monte Carlo method to model semi-classical carrier transport in advanced semiconductor devices. We report examples of the use of the Multi- Subband Monte Carlo method to simulate MOSFETs with III-V compound semiconductor channel. Monte Carlo transport modeling of graphene-based transistors is also addressed. |
Handle: | http://hdl.handle.net/11390/1065675 |
ISBN: | 978-953233085-4 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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