IRIS

OSGNACH, Patrik

OSGNACH, Patrik  

DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autore(i) File
An Improved Semi-classical Approach for Simulating Tunnel-FETs 1-gen-2012 Revelant, Alberto; Osgnach, Patrik; Palestri, Pierpaolo; Selmi, Luca
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 1-gen-2013 Revelant, Alberto; Osgnach, Patrik; Palestri, Pierpaolo; Selmi, Luca
An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs 1-gen-2016 Badami, Oves Mohamed Hussein; Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells 1-gen-2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Development and Optimisation of Advanced Simulation Models for Nanoscale FETs with Alternative Channel Materials 8-apr-2015 Osgnach, Patrik
Low-voltage high-performance III-V semiconductor MOSFETs for advanced CMOS nodes: impact of strain and interface traps 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca
Performance Benchmarking and Effective Channel Length for Nanoscale InAs, In0.53Ga0.47As, and sSi n-MOSFETs 1-gen-2014 Lizzit, Daniel; Esseni, David; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
Performance Study of Strained III-V Materials for Ultra-Thin Body Transistor Applications 1-gen-2016 Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt
Simulation analysis of III-V n-MOSFETs: channel materials, Fermi level pinning and biaxial strain 1-gen-2015 Caruso, Enrico; Lizzit, Daniel; Osgnach, Patrik; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors 1-gen-2015 Palestri, Pierpaolo; Caruso, Enrico; Driussi, Francesco; Esseni, David; Lizzit, Daniel; Osgnach, Patrik; Venica, Stefano; Selmi, Luca
The impact of interface states on the mobility and drive current of In 0.53Ga 0.47As semiconductor n-MOSFETs 1-gen-2015 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
The impact of interface states on the mobility and the drive current of III-V MOSFETs 1-gen-2014 Osgnach, Patrik; Caruso, Enrico; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 1-gen-2013 Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca