We present a model for Tunnel FETs (TFETs) capable to describe off equilibrium transport as well as Band to Band Tunneling (BtBT), that is implemented as an additional block into an existing Multi-Subband Monte Carlo (MSMC) transport simulator. To account for the quantum effect associated to the confinement of carriers in Ultra Thin Body SOI devices, a correction to the computation of the BtBT generation rate is proposed. The developed simulator is here applied to the study of III-V based TFETs.
An Improved Semi-Classical Model to Investigate Tunnel-FET performance
REVELANT, Alberto;OSGNACH, Patrik;PALESTRI, Pierpaolo;SELMI, Luca
2013-01-01
Abstract
We present a model for Tunnel FETs (TFETs) capable to describe off equilibrium transport as well as Band to Band Tunneling (BtBT), that is implemented as an additional block into an existing Multi-Subband Monte Carlo (MSMC) transport simulator. To account for the quantum effect associated to the confinement of carriers in Ultra Thin Body SOI devices, a correction to the computation of the BtBT generation rate is proposed. The developed simulator is here applied to the study of III-V based TFETs.File in questo prodotto:
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