REVELANT, Alberto

REVELANT, Alberto  

DIEG - DIPARTIMENTO DI INGEGNERIA ELETTRICA, GESTIONALE E MECCANICA (attivo dal 01/01/1900 al 31/12/2015)  

Mostra records
Risultati 1 - 14 di 14 (tempo di esecuzione: 0.016 secondi).
Titolo Data di pubblicazione Autore(i) File
An Improved Semi-classical Approach for Simulating Tunnel-FETs 1-gen-2012 Revelant, Alberto; Osgnach, Patrik; Palestri, Pierpaolo; Selmi, Luca
An Improved Semi-Classical Model to Investigate Tunnel-FET performance 1-gen-2013 Revelant, Alberto; Osgnach, Patrik; Palestri, Pierpaolo; Selmi, Luca
Analysis of the Performance of n-Type FinFETs With Strained SiGe Channel 1-gen-2013 Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Revelant, Alberto; Selmi, Luca
Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Selmi, Luca
Challenges and opportunities in the design of Tunnel FETs: materials, device architectures, and defects 1-gen-2014 Esseni, David; Pala, M. G.; Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca; Li, M.; Snider, G.; Jena, D.; Xing, H. G.
Device variability and correlation control by automated tuning of SPICE cards to PCM measurements 1-gen-2011 Revelant, Alberto; Lucci, Luca; Selmi, Luca; Ankele, B.
Electron-Hole Bilayer TFET: Experiments and Comments 1-gen-2014 Revelant, Alberto; Anthony, Villalon; Yan, Wu; Alexander, Zaslavsky; Cyrille Le, Royer; Hiroshi, Iwai; Sorin, Cristoloveanu
First Demonstration of Strained SiGe Nanowires TFETs with ION beyond 700μA/μm 1-gen-2014 A., Villalon; C., Le Royer; P., Nguyen; S., Barraud; F., Glowacki; Revelant, Alberto; Selmi, Luca; S., Cristoloveanu; L., Tosti; C., Vizioz; J. M., Hartmann; N., Bernier; B., Prévitali; C., Tabone; F., Allain; S., Martinie; O., Rozeau; M., Vinet
High Performance SiGe Nanowire Tunnel FETs: Low Temperature Characterization for Device Process Optimization 1-gen-2014 A., Villalon; Revelant, Alberto; C., Le Royer; P., Nguyen; Selmi, Luca; S., Cristoloveanu
Modelling, Simulation and Characterization of Tunnel-FET Devices for Ultra-low Power Electronics 15-mag-2014 Revelant, Alberto
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs 1-gen-2012 Revelant, Alberto; Palestri, Pierpaolo; Selmi, Luca
On the Optimization of SiGe and III-V Compound Hetero-Junction Tunnel FET Devices 1-gen-2013 Revelant, Alberto; Palestri, Pierpaolo; Osgnach, Patrik; Lizzit, Daniel; Selmi, Luca
Prognostic nutritional index predicts toxicity in head and neck cancer patients treated with definitive radiotherapy in association with chemotherapy 1-gen-2021 Fanetti, G.; Polesel, J.; Fratta, E.; Muraro, E.; Lupato, V.; Alfieri, S.; Gobitti, C.; Minatel, E.; Matrone, F.; Caroli, A.; Revelant, A.; Lionello, M.; Polentin, V. Z.; Ferretti, A.; Guerrieri, R.; Chiovati, P.; Bertolin, A.; Giacomarra, V.; De Paoli, A.; Vaccher, E.; Sartor, G.; Steffan, A.; Franchin, G.
Toward computationally efficient Multi-Subband Monte Carlo simulations of nanoscale MOSFETs 1-gen-2013 Osgnach, Patrik; Revelant, Alberto; Lizzit, Daniel; Palestri, Pierpaolo; Esseni, David; Selmi, Luca