We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.

Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs

REVELANT, Alberto;PALESTRI, Pierpaolo;SELMI, Luca
2012-01-01

Abstract

We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
2012
9781467301923
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/883053
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