We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.
Multi-Subband Semi-classical Simulation of n-type Tunnel-FETs
REVELANT, Alberto;PALESTRI, Pierpaolo;SELMI, Luca
2012-01-01
Abstract
We present a newly developed model for Tunnel- FET (TFET) devices capable to describe band-toband tunneling (BtBT) as well as off-equilibrium transport of the generated carriers. BtBT generation is implemented as an add-on into an existing Multi-subband Monte Carlo (MSMC) transport simulator that accounts for the effects of alternative channel materials and high- dielectrics. A simple correction for the calculation of the BtBT generation rate is proposed to account for carrier confinement in the subbands.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
Revelant_ULIS2012.pdf
non disponibili
Tipologia:
Abstract
Licenza:
Non pubblico
Dimensione
273.71 kB
Formato
Adobe PDF
|
273.71 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.