We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k p and non-parabolic effective mass models. Parameter sets for the non-parabolic C, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0:53Ga0:47As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III–V semiconductor band structure calculation methods and calibrated band parameters for device simulations.

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

CARUSO, Enrico;ESSENI, David;OSGNACH, Patrik;PALESTRI, Pierpaolo;SELMI, Luca;
2016

Abstract

We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k p and non-parabolic effective mass models. Parameter sets for the non-parabolic C, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0:53Ga0:47As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III–V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
File in questo prodotto:
File Dimensione Formato  
ZerveasSSE2016.pdf

accesso aperto

Descrizione: ZerveasSSE2016
Tipologia: Versione Editoriale (PDF)
Licenza: Creative commons
Dimensione 1.61 MB
Formato Adobe PDF
1.61 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1082999
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 18
  • ???jsp.display-item.citation.isi??? 16
social impact