We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.
Modeling approaches for band-structure calculation in III-V FET quantum wells
CARUSO, Enrico;ESSENI, David;PALESTRI, Pierpaolo;SELMI, Luca;
2015-01-01
Abstract
We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
2015_Caruso_Modeling_approaches_for_band-structure.pdf
solo utenti autorizzati
Descrizione: 2015_Caruso_Modeling_approaches_for_band-structure
Tipologia:
Documento in Post-print
Dimensione
1.6 MB
Formato
Adobe PDF
|
1.6 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
