We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.
Modeling approaches for band-structure calculation in III-V FET quantum wells
CARUSO, Enrico;ESSENI, David;PALESTRI, Pierpaolo;SELMI, Luca;
2015-01-01
Abstract
We compare band-structure calculations obtained with modeling approaches hierarchically spanning from density functional theory to tight-binding, k⋅p and non-parabolic effective mass descriptions. We consider III-V quantum-wells with thickness ranging from 3nm to 10nm. Comparison with experiments for unstrained and strained InGaAs quantum-wells is also reported.File in questo prodotto:
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