We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer- scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x) As compound semiconductors of interest for future CMOS technology nodes.

On the electron velocity-field relation in ultra-thin films of III–V compound semiconductors for advanced CMOS technology nodes

CARUSO, Enrico;PIN, ALESSANDRO;PALESTRI, Pierpaolo;SELMI, Luca
2017

Abstract

We report Multi-Valley-Multi-Subband Monte Carlo simulations of the velocity-field curves in bulk and thin film InAs, GaAs and In0.53Ga0.47As. Our model suggests that surface roughness scattering reduces the saturation velocity of nanometer- scale films significantly below the corresponding Silicon value. The injection velocity, instead, remains larger than for Silicon down to small film thickness. The results provide a useful reference for the calibration of TCAD compact models for thin films of InxGa(1-x) As compound semiconductors of interest for future CMOS technology nodes.
978-1-5090-5313-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11390/1114661
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